BSL307SP Infineon Technologies, BSL307SP Datasheet - Page 2

• Manufacturer Part Number: BSL307SP
• Description: MOSFET P-CH 30V 5.5A 6-TSOP
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSL307SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 40µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 805pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Package: TSOP-6
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 43.0 mOhm
• Rds (on) (max) (@4.5v): 74.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSL307SPINTR

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t 5 sec.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=-40µA
=-30V, V
=-30V, V
=0, I
=-20V, V
=-4.5V, I
=-10V, I
2
D
cooling area
=-250µA
D
GS
GS
D
DS
=-5.5A
=-4.2A
=0, T
=0, T
=0
j
j
=25°C
=150°C
1)
GS
= V
j
DS
= 25 °C, unless otherwise specified
Rev 1.2
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
-30
-1
-
-
-
-
-
-
-
-
Values
Values
-0.1
typ.
-1.5
-10
typ.
-10
52
31
-
-
-
-
max.
max.
-100
-100
62.5
230
BSL307SP
74
43
50
2007-02-23
-2
-1
-
Unit
V
µA
nA
m
Unit
K/W