SPB80N03S2L-04 G Infineon Technologies, SPB80N03S2L-04 G Datasheet - Page 5

• Manufacturer Part Number: SPB80N03S2L-04 G
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N03S2L-04 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 130µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 188W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000200143; SPB80N03S2L04GXT

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N03S2L-04
GS
P
0.5
tot
0.5
); T
); V
j
= 188W
p
p
= 80 µs
= 80 µs
i
1
j
=25°C
DS
1
h
1.5
≥ 2 x I
1.5
2
2
D
2.5
x R
2.5
3
DS(on)max
3
3.5
g
e
c
a
3.5
d
f
b
V GS [V]
4
a
b
c
d
e
f
g
h
i
j
V
V
V
V
DS
GS
10.0
2.5
2.8
3.0
3.3
3.5
3.8
4.0
4.3
4.5
4.5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
Ω
S
14
12
11
10
35
25
20
15
10
SPP80N03S2L-04,SPB80N03S2L-04
9
8
7
6
5
4
3
2
1
0
5
0
0
0
D
SPP80N03S2L-04
= f (I
V
); T
GS
3.5
e
20
[V] =
20
3.8
j
f
=25°C
D
fs
GS
40
)
g
4.0
40
60
e
4.3
h
80 100 120 140 160
4.5
i
60
10.0
j
SPI80N03S2L-04
80
f
100
2003-05-09
j
A
g
I
D
I
A
h
D
i
140
200