BF994S,215 NXP Semiconductors, BF994S,215 Datasheet - Page 5

MOSFET NCH DUAL GATE 20V SOT143B

BF994S,215

Manufacturer Part Number
BF994S,215
Description
MOSFET NCH DUAL GATE 20V SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF994S,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Gain
25dB
Voltage - Rated
20V
Current Rating
30mA
Noise Figure
1dB
Current - Test
10mA
Voltage - Test
15V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Application
VHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
25@15VdB
Noise Figure (max)
1(Typ)dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.5@15V@Gate 1/1.2@15V@Gate 2pF
Output Capacitance (typ)@vds
1@15VpF
Reverse Capacitance (typ)
0.025@15VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1972-2
933754970215
BF994S T/R
NXP Semiconductors
PACKAGE OUTLINE
July 1993
Plastic surface-mounted package; 4 leads
N-channel dual-gate MOS-FET
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT143B
1.1
0.9
A
max
0.1
A 1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
1.4
1.2
E
3
2
1.9
w
e
B
JEITA
scale
M
5
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
L p
Product specification
0.1
y
A
ISSUE DATE
04-11-16
06-03-16
BF994S
c
SOT143B
X

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