BLF542,112 NXP Semiconductors, BLF542,112 Datasheet
BLF542,112
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BLF542
BLF542
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BLF542,112 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 08 M3D076 2003 Sep 18 ...
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Philips Semiconductors UHF power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Withstands full load mismatch Designed for broadband operation. APPLICATIONS Large signal amplifier applications in the UHF frequency range. DESCRIPTION ...
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Philips Semiconductors UHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage ...
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Philips Semiconductors UHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage I (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth g forward ...
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Philips Semiconductors UHF power MOS transistor 4 handbook, halfpage T.C. (mV/ –2 –4 0 100 Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 6 handbook, halfpage R ...
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Philips Semiconductors UHF power MOS transistor 6 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B ...
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Philips Semiconductors UHF power MOS transistor 20 handbook, halfpage (dB Class-B operation mA 9.7 + j24 ...
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Philips Semiconductors UHF power MOS transistor List of components (see Fig.11) COMPONENT C1, C5, C13 multilayer ceramic chip capacitor; note 1 C2, C4, C10, film dielectric trimmer C12 C3, C9 multilayer ceramic chip capacitor; note 1 C6 multilayer ceramic chip ...
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Philips Semiconductors UHF power MOS transistor handbook, full pagewidth handbook, full pagewidth strap (8x) mounting screws (12x) The components are mounted on one side of a copper-clad printed circuit board; the other side is unetched and serves ...
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Philips Semiconductors UHF power MOS transistor 10 handbook, halfpage 100 200 300 Class-B operation mA Fig.13 ...
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Philips Semiconductors UHF power MOS transistor BLF542 scattering parameters mA; note (MHz 1.00 3.0 10 1.00 6.0 20 1.00 12.0 30 0.99 17.9 ...
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Philips Semiconductors UHF power MOS transistor BLF542 scattering parameters mA.; note (MHz 1.00 4.1 10 1.00 8.2 20 0.99 16.3 30 0.98 24.1 ...
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Philips Semiconductors UHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 6.81 3.18 2.13 ...
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Philips Semiconductors UHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...