BLF542,112 NXP Semiconductors, BLF542,112 Datasheet - Page 2

• Manufacturer Part Number: BLF542,112
• Description: TRANSISTOR RF DMOS SOT171A
• Manufacturer: NXP Semiconductors

Specifications of BLF542,112

• Package / Case: SOT-171A
• Transistor Type: N-Channel
• Frequency: 500MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 1.5A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 5 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (max): 500MHz
• Package Type: CDFM
• Pin Count: 6
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@15Vmohm
• Input Capacitance (typ)@vds: 14@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 59%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2417; 934006660112; BLF542; BLF542

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
package with a ceramic cap. All leads are isolated from the
flange.
QUICK REFERENCE DATA
RF performance at T
2003 Sep 18
CW, class-B
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability
Withstands full load mismatch
Designed for broadband operation.
Large signal amplifier applications in the UHF frequency
range.
UHF power MOS transistor
MODE OF OPERATION
h
= 25 C in a common source class-B circuit.
(MHz)
500
f
WARNING
CAUTION
2
PINNING - SOT171A
handbook, halfpage
V
(V)
28
DS
PIN
1
2
3
4
5
6
Top view
Fig.1 Simplified outline and symbol.
2
1
source
source
gate
drain
source
source
(W)
4
3
P
5
L
6
5
DESCRIPTION
(dB)
G
Product specification
13
p
g
MAM390
BLF542
d
s
(%)
50
D