BLF278,112 NXP Semiconductors, BLF278,112 Datasheet - Page 12

• Manufacturer Part Number: BLF278,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Power Gain (typ)@vds: 20(Min)@50V/18@50V/16@50VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 80%
• Mounting: Screw
• Mode Of Operation: CW Class-AB/CW Class-B/CW Class-C
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 7
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2412; 933978520112; BLF278; BLF278

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-B operation; V
R
Fig.14 Input impedance as a function of frequency
GS
( )
Z i
= 4
2
1
0
1
2
25
Fig.16 Definition of MOS impedance.
(series components); typical values per
section.
(per section); P
Z i
DS
= 50 V; I
75
L
= 300 W.
r i
x i
DQ
= 2
Z L
125
0.1 A;
MBA379
f (MHz)
MGE685
175
12
handbook, halfpage
handbook, halfpage
Class-B operation; V
R
Fig.15 Load impedance as a function of frequency
Class-B operation; V
R
Fig.17 Power gain as a function of frequency;
(dB)
GS
GS
G p
( )
Z L
= 4
= 4
30
20
10
8
6
4
2
0
0
25
25
(series components); typical values per
section.
typical values per section.
(per section); P
(per section); P
DS
DS
R L
= 50 V; I
= 50 V; I
75
75
L
L
= 300 W.
= 300 W.
DQ
DQ
= 2
= 2
X L
125
125
0.1 A;
0.1 A;
Product Specification
f (MHz)
f (MHz)
MGE686
BLF278
MGE687
175
175