BLF368,112 NXP Semiconductors, BLF368,112 Datasheet - Page 3

• Manufacturer Part Number: BLF368,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF368,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Current - Test: 250mA
• Voltage - Test: 32V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 300W
• Power Gain (typ)@vds: 15@28VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 495@32VpF
• Output Capacitance (typ)@vds: 340@32VpF
• Reverse Capacitance (typ): 40@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-AB
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2390; 933978490112; BLF368; BLF368

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 26
handbook, halfpage
Per transistor section unless otherwise specified
V
V
I
P
T
T
R
R
SYMBOL
SYMBOL
D
stg
j
DS
GS
tot
th j-mb
th mb-h
VHF push-pull power MOS transistor
(1) Current in this area may be limited by R
(2) T
Total device; both sections equally loaded.
(A)
10
I D
10
mb
1
2
1
= 25 C.
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation T
storage temperature
junction temperature
thermal resistance from junction to mounting base total device; both sections
thermal resistance from mounting base to
heatsink
(1)
PARAMETER
Fig.2 DC SOAR.
10
PARAMETER
(2)
V DS (V)
DSon
mb
.
25 C total device; both sections equally loaded
MRA933
10
2
CONDITIONS
3
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
equally loaded
total device; both sections
equally loaded
P tot
(W)
500
400
300
200
100
0
CONDITIONS
0
Fig.3 Power derating curves.
40
(1)
80
(2)
MIN.
65
VALUE
0.35
0.15
Product specification
120
65
25
500
+150
200
T h ( C)
MAX.
20
BLF368
MGE616
160
UNIT
K/W
K/W
V
V
A
W
C
C
UNIT