PD84002 STMicroelectronics, PD84002 Datasheet - Page 5

TRANS RF POWER LDMOST

PD84002

Manufacturer Part Number
PD84002
Description
TRANS RF POWER LDMOST
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD84002

Transistor Type
LDMOS
Frequency
870MHz
Gain
15dB
Voltage - Rated
25V
Current Rating
2A
Current - Test
100mA
Voltage - Test
7.5V
Power - Output
2W
Package / Case
SOT-89
Drain Source Voltage Vds
25V
Continuous Drain Current Id
2A
Power Dissipation Pd
6W
Operating Temperature Range
-65°C To +150°C
Rf Transistor Case
SOT-89
Configuration
Single
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
- 0.5 V to + 15 V
Continuous Drain Current
2 A
Power Dissipation
6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
25V
Output Power (max)
2W(Typ)
Power Gain (typ)@vds
15dB
Frequency (max)
1GHz
Package Type
SOT-89
Pin Count
3 +Tab
Input Capacitance (typ)@vds
16@7.5VpF
Output Capacitance (typ)@vds
16@7.5VpF
Reverse Capacitance (typ)
1.2@7.5VpF
Operating Temp Range
-65C to 150C
Drain Efficiency (typ)
65%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
6000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
 Details
Other names
497-8287-2

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Company
Part Number
Manufacturer
Quantity
Price
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PD84002
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TOSHIBA
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ST
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PD84002
3
Impedances
Figure 3.
Table 7.
F(MHz)
860
870
880
890
900
910
920
930
940
Impedances
Impedances
1,80 + j 7,79
1,84 + j 7,96
1,83 + j 8,01
1,76 + j 8,11
1,70 + j 8,20
1,63 + j 8,30
1,57 + j 8,48
1,43 + j 8,64
1,41 + j 8,83
Z
GS
3,88 + j 2,41
3,89 + j 2,69
4,17 + j 3,16
4,27 + j 3,32
4,37 + j 3,40
4,41 + j 3,46
4,36 + j 3,51
4,28 + j 3,51
4,01+ j 2,96
Z
DL
Impedances
5/16

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