PD57060S-E STMicroelectronics, PD57060S-E Datasheet - Page 6

• Manufacturer Part Number: PD57060S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57060S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.3dB
• Voltage - Rated: 65V
• Current Rating: 7A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 60W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 65V
• Output Power (max): 60W(Min)
• Power Gain (typ)@vds: 14.3dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 83@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 54%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5310-5

Typical performance
4
6/21
Figure 3.
Figure 5.
C (pF)
1000
VGS (Normalized)
1.06
1.04
1.02
0.98
0.96
0.94
0.92
100
10
1
1
-25
0
VDS = 10 V
Typical performance
Capacitance vs supply voltage
Gate-source voltage vs
case temperature
5
0
10
25
Tc (°C)
VDS (V)
15
Crss
50
Id = 1 A
20
Ciss
Coss
Id = 0.5 A
75
25
Id = 2 A
Id = 5 A
f = 1 MHz
Id = 4 A
Id = 3 A
Doc ID 11758 Rev 4
100
30
Figure 4.
Figure 6.
Pout (W)
80
70
60
50
40
30
20
10
Id (A)
8
7
6
5
4
3
2
0
1
0
2
0
2.5
0.5
Drain current vs gate source
voltage
Output power vs input power
3
1
925MHz
3.5
1.5
VGS (V)
Pin (W)
4
2
890MHz
4.5
2.5
960MHz
945MHz
5
3
VDS=10 V
VDS=28V
IDQ=100mA
PD57060-E
5.5
3.5
6
4