PD57060S-E STMicroelectronics, PD57060S-E Datasheet - Page 7

• Manufacturer Part Number: PD57060S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57060S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.3dB
• Voltage - Rated: 65V
• Current Rating: 7A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 60W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 65V
• Output Power (max): 60W(Min)
• Power Gain (typ)@vds: 14.3dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 83@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 54%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5310-5

PD57060-E
Figure 7.
Figure 9.
Gp (dB)
18
16
14
12
10
RL (dB)
-10
-20
-30
-40
8
6
4
2
0
0
0
10
10
Power gain vs output power
Input return loss vs output power
925MHz
945MHz
20
20
960MHz
890MHz
30
30
Pout (W)
Pout (W)
890MHz
40
40
50
50
960MHz
925MHz
60
60
VDS=28V
IDQ=100mA
VDS=28V
IDQ=100mA
70
70
945MHz
Doc ID 11758 Rev 4
80
80
Figure 8.
Figure 10. Output power vs bias current
Nd (%)
70
60
50
40
30
20
Pout (W)
80
70
60
50
40
30
20
10
0
0
10
Drain efficiency vs output power
0.5
20
890MHz
960MHz
30
1
890MHz
Pout (W)
IDQ (A)
40
925MHz
Typical performance
1.5
945MHz
50
945MHz
60
925MHz
2
960MHz
VDS=28V
IDQ=100mA
Pin=32.8dBm
VDS=28V
70
2.5
80
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