BF904AWR,115 NXP Semiconductors, BF904AWR,115 Datasheet
BF904AWR,115
Specifications of BF904AWR,115
BF904AWR T/R
BF904AWR T/R
Related parts for BF904AWR,115
BF904AWR,115 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 ...
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Philips Semiconductors N-channel dual gate MOS-FETs FEATURES Specially designed for use supply voltage Short channel transistor with high transfer admittance to input capacitance ratio Low noise gain controlled amplifier GHz Superior cross-modulation performance during ...
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Philips Semiconductors N-channel dual gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total ...
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Philips Semiconductors N-channel dual gate MOS-FETs THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s Note 1. Soldering point of the source lead. STATIC CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V ...
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Philips Semiconductors N-channel dual gate MOS-FETs (mS Fig.5 Transfer admittance as a function of the junction temperature; typical values. 120 handbook, halfpage V unw (dB V) 110 100 90 80 ...
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Philips Semiconductors N-channel dual gate MOS-FETs 20 handbook, halfpage (mA) 16 1 1 ...
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Philips Semiconductors N-channel dual gate MOS-FETs 12 handbook, halfpage I D (mA G2 120 k (connected to V ...
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Philips Semiconductors N-channel dual gate MOS-FETs 2 10 handbook, halfpage y is (mS mA ...
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Philips Semiconductors N-channel dual gate MOS-FETs R GEN 1999 May 14 BF904A; BF904AR; BF904AWR V AGC 4 DUT 4 Fig.21 Cross-modulation test set-up. 9 ...
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Philips Semiconductors N-channel dual gate MOS-FETs Table 1 Scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 40 0.989 3.2 100 0.987 7.9 200 0.976 15.7 300 0.972 23.3 400 0.947 30.6 500 0.925 37.6 600 0.905 44.4 ...
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Philips Semiconductors N-channel dual gate MOS-FETs PACKAGE OUTLINES Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 ...
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Philips Semiconductors N-channel dual gate MOS-FETs Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 ...
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Philips Semiconductors N-channel dual gate MOS-FETs Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 ...
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Philips Semiconductors N-channel dual gate MOS-FETs DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...
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Philips Semiconductors N-channel dual gate MOS-FETs 1999 May 14 BF904A; BF904AR; BF904AWR NOTES 15 Product specification ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...