BF556C,215 NXP Semiconductors, BF556C,215 Datasheet - Page 4

• Manufacturer Part Number: BF556C,215
• Description: MOSFET N-CH 30V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF556C,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 30V
• Current Rating: 18mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.5 V to - 7.5 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Drain Current (idss At Vgs=0): 11 mA to 18 mA
• Continuous Drain Current: 18 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934021490215; BF556C T/R; BF556C T/R

Philips Semiconductors
7. Static characteristics
Table 7:
T
9397 750 13393
Product data sheet
Symbol
V
V
I
I
DSS
GSS
j
y
y
(BR)GSS
GSoff
= 25 C unless otherwise specified.
fs
os
Parameter
gate-source breakdown voltage
gate-source cut-off voltage
drain current
gate-source leakage current
forward transfer admittance
common source output
admittance
Static characteristics
Conditions
I
I
V
V
V
V
G
D
GS
GS
GS
GS
BF556A
BF556B
BF556C
= 200 A; V
= 1 A; V
Rev. 03 — 5 August 2004
= 0 V; V
= 20 V; V
= 0 V; V
= 0 V; V
DS
DS
DS
DS
DS
DS
= 15 V
= 15 V
= 15 V
BF556A; BF556B; BF556C
= 0 V
= 15 V
= 0 V
N-channel silicon junction field-effect transistors
Min
3
6
11
-
4.5
-
30
0.5
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
-
-
-
-
-
40
0.5
Max
-
7
13
18
-
-
7.5
5000
Unit
V
V
mA
mA
mA
pA
mS
S
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