BF512,215 NXP Semiconductors, BF512,215 Datasheet - Page 9

MOSFET N-CH 20V 10MA SOT23

BF512,215

Manufacturer Part Number
BF512,215
Description
MOSFET N-CH 20V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF512,215

Package / Case
SST3 (SOT-23-3)
Current Rating
30mA
Frequency
100MHz
Transistor Type
N-Channel JFET
Noise Figure
1.5dB
Current - Test
5mA
Voltage - Test
10V
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
20 V
Gate-source Cutoff Voltage
2.2 V
Gate-source Breakdown Voltage
20 V
Maximum Drain Gate Voltage
20 V
Continuous Drain Current
30 mA
Drain Current (idss At Vgs=0)
6 mA to 12 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933505290215::BF512 T/R::BF512 T/R
Printed in The Netherlands
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
provides High Performance Mixed Signal and Standard Product
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Interface, Security and Digital Processing expertise
R77/02/pp9
Date of release: December 1997

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