BF1205C,115 NXP Semiconductors, BF1205C,115 Datasheet

MOSFET N-CH DUAL GATE 10V SOT363

BF1205C,115

Manufacturer Part Number
BF1205C,115
Description
MOSFET N-CH DUAL GATE 10V SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205C115.pdf (22 pages)

Specifications of BF1205C,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
19mA
Voltage - Test
5V
Configuration
Dual
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
6V
Power Gain (typ)@vds
35@5VdB
Noise Figure (max)
2.1dB
Package Type
SOT-363
Pin Count
6
Input Capacitance (typ)@vds
2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/2@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF
Output Capacitance (typ)@vds
0.9@5V@Amp A/0.85@5V@Amp BpF
Reverse Capacitance (typ)
0.02@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
180mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058083115
BF1205C T/R
BF1205C T/R
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source
and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
bias of amplifier b.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
I
I
I
I
I
I
BF1205C
Dual N-channel dual gate MOS-FET
Rev. 02 — 15 August 2006
Two low noise gain controlled amplifiers in a single package; one with a fully integrated
bias and one with a partly integrated bias
Internal switch to save external components
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio.
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
digital and analog television tuners
professional communication equipment.
Product data sheet

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BF1205C,115 Summary of contents

Page 1

BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. ...

Page 2

Philips Semiconductors 1.4 Quick reference data Table 1. Per MOS-FET unless otherwise specified. Symbol Parameter tot ig1-ss C rss NF X mod Pinning information Table 2. ...

Page 3

Philips Semiconductors 3. Ordering information Table 3. Type number BF1205C 4. Marking Table 4. Type number BF1205C [ made in Hong Kong made in Malaysia made in China. 5. ...

Page 4

Philips Semiconductors Fig 1. Power derating curve. 7. Static characteristics Table 7. Static characteristics Symbol Parameter Per MOS-FET; unless otherwise specified V drain-source breakdown voltage (BR)DSS V gate 1-source breakdown voltage (BR)G1-SS V gate 2-source ...

Page 5

Philips Semiconductors (mA (4) 4 ( 120 k . D( 150 k . D( ...

Page 6

Philips Semiconductors Table 8. Dynamic characteristics for amplifier a Common source amb G2-S Symbol Parameter X cross-modulation mod [1] For the MOS-FET not in use: V G1-S(b) [2] Measured in Figure 33 test circuit. 8.1.1 ...

Page 7

Philips Semiconductors (mS ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S (5) ...

Page 8

Philips Semiconductors (mA DS(a) DS(b) supply G2 150 k (connected to ground); see G1(b) Figure 3. Fig 8. Drain current ...

Page 9

Philips Semiconductors (mA DS(a) DS(b) G1-S( see Figure 33. amb Fig 12. Drain current as a function of gain reduction; ...

Page 10

Philips Semiconductors DS(a) G2-S(a) Fig 16. Output admittance as a function of frequency; typical values. 8.1.2 Scattering parameters for amplifier a Table DS(a) f (MHz) ...

Page 11

Philips Semiconductors 8.2 Dynamic characteristics for amplifier b Table 11. Dynamic characteristics for amplifier b Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate 1 ig1-ss C input capacitance ...

Page 12

Philips Semiconductors 8.2.1 Graphs for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. ...

Page 13

Philips Semiconductors 100 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S (5) ...

Page 14

Philips Semiconductors (mA ( G1(b) ( G1(b) ( 100 k . G1(b) ( 120 k . G1(b) (5) ...

Page 15

Philips Semiconductors ( 3.0 ...

Page 16

Philips Semiconductors (mS DS(b) G2-S DS( mA. D(b) ...

Page 17

Philips Semiconductors 8.2.2 Scattering parameters for amplifier b Table 12 DS(b) f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 8.2.3 Noise data for amplifier b Table 13 ...

Page 18

Philips Semiconductors 9. Test information R GEN 50 Fig 33. Cross-modulation test set-up for amplifi GEN Fig 34. Cross-modulation test set-up for amplifier b. BF1205C_2 Product data sheet V AGC (a) 4.7 nF ...

Page 19

Philips Semiconductors 10. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE ...

Page 20

Philips Semiconductors 11. Revision history Table 14. Revision history Document ID Release date BF1205C_2 20060815 • Modifications: Figure BF1205C_1 20040518 (9397 750 13005) BF1205C_2 Product data sheet Data sheet status Product data sheet 1: replaced drawing with correct drawing 001aac193 ...

Page 21

Philips Semiconductors 12. Legal information 12.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...

Page 22

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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