BF1206,115 NXP Semiconductors, BF1206,115 Datasheet
BF1206,115
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BF1206
BF1206
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BF1206,115 Summary of contents
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DATA SHEET handbook, halfpage BF1206 Dual N-channel dual-gate MOS-FET Product specification DISCRETE SEMICONDUCTORS MBD128 2003 Nov 17 ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET FEATURES Two low noise gain controlled amplifiers in a single package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. ORDERING INFORMATION TYPE NUMBER NAME BF1206 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per MOS-FET; unless otherwise specified ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 200 handbook, halfpage P tot (mW) 150 100 100 Fig.2 Power derating curve. STATIC CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER Per MOS-FET unless otherwise specified V drain-source breakdown voltage (BR)DSS V gate-source breakdown voltage (BR)G1-SS V gate-source breakdown voltage ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET DYNAMIC CHARACTERISTICS AMPLIFIER C; V Common source; T amb SYMBOL PARAMETER y forward transfer admittance fs C input capacitance at gate 1 ig1-ss C input capacitance at gate 2 ig2-ss C output capacitance oss C reverse transfer capacitance MHz rss NF noise figure G power gain ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET GRAPHS FOR AMPLIFIER a 30 handbook, halfpage I D (mA 0 ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2-S Fig.3 Transfer characteristics; typical values; amplifier a. 2003 Nov 17 MLE258 handbook, halfpage (1) (2) (4) (3) (5) (6) (7) 1 G1 ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 100 handbook, halfpage I G1 (μ 0 ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2-S Fig.5 Gate 1 current as a function of gate 1 voltage; typical values; amplifier a. 24 handbook, halfpage I D (mA G2-S j Fig.7 Drain current as a function of gate 1 current; ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 40 handbook, halfpage I D (mA 150 k (connected k k k k. G1 Fig.9 Drain current as a function of gate 1 (V and drain supply voltage; typical values; amplifier a. 2003 Nov 17 MLE288 handbook, halfpage (1) (2) (3) (4) (5) (6) ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 50 handbook, halfpage I G1 (μ k (connected see Fig. 4 Fig.11 Gate 1 current as a function of gate 2 voltage; typical values; amplifier a. 0 handbook, halfpage gain reduction (dB) −10 −20 −30 −40 − k MHz see Fig.35. Fig.13 Typical gain reduction as a function of AGC voltage ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 2 10 handbook, halfpage Y is (mS − mA amb Fig.15 Input admittance as a function of frequency; typical values; amplifier handbook, halfpage (mS) 10 −ϕ mA amb Fig.17 Forward transfer admittance and phase as a function of frequency; typical values; amplifier a. 2003 Nov 17 ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET Amplifier a scattering parameters mA G2 MAGNITUDE ANGLE (MHz) (ratio) (deg) 4.62 50 0.988 9.23 100 0.984 18.33 200 0.971 27.32 300 0.951 36.04 400 0.926 44.50 500 0.896 52.63 600 0.865 60.47 700 0.832 67.66 800 0.797 ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET DYNAMIC CHARACTERISTICS AMPLIFIER C; V Common source; T amb SYMBOL PARAMETER y forward transfer admittance fs C input capacitance at gate 1 ig1-ss C input capacitance at gate 2 ig2-ss C output capacitance oss C reverse transfer capacitance MHz rss F noise figure G power gain ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET GRAPHS FOR AMPLIFIER b 30 handbook, halfpage I D (mA 0 ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2-S Fig.19 Transfer characteristics; typical values; amplifier b. 2003 Nov 17 MLE272 handbook, halfpage (1) (2) (4) (3) (5) (6) (7) 1 G1 ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 100 handbook, halfpage I G1 (μ 0 ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2-S Fig.21 Gate 1 current as a function of gate 1 voltage; typical values; amplifier b. 24 handbook, halfpage I D (mA G2-S j Fig.23 Drain current as a function of gate 1 current; ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 24 handbook, halfpage I D (mA G2 150 k (connected see Fig.35 ( 270 k 220 k 180 k 150 k. G1 Fig.25 Drain current as a function of gate 1 (V and drain supply voltage; typical values; amplifier b. 2003 Nov 17 MLE278 handbook, halfpage ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 30 handbook, halfpage I G1 (μ 150 k (connected see Fig. 4 Fig.27 Gate 1 current as a function of gate 2 voltage; typical values; amplifier b. 0 handbook, halfpage gain reduction (dB) −10 −20 −30 −40 − 150 k MHz see Fig.35. ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET 2 10 handbook, halfpage Y is (mS −1 10 − mA amb Fig.31 Input admittance as a function of frequency; typical values; amplifier handbook, halfpage (mS) 10 −ϕ mA amb Fig.33 Forward transfer admittance and phase as a function of frequency; typical values; amplifier b. 2003 Nov 17 ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET handbook, full pagewidth R GEN 50 Ω Fig.35 Cross-modulation test set-up (for one MOS-FET). Amplifier b scattering parameters mA G2 MAGNITUDE ANGLE (MHz) (ratio) (deg) 3.43 50 0.991 6.84 100 0.989 13.61 200 0.982 20.37 300 0.973 27.05 400 0.961 ...
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... NXP Semiconductors Dual N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2003 Nov scale 2.2 1.35 2.2 1.3 0.65 1 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...