MOSFET N-CH DUAL GATE 6V SOT363

 

BF1206,115

Manufacturer Part NumberBF1206,115
DescriptionMOSFET N-CH DUAL GATE 6V SOT363
ManufacturerNXP Semiconductors
BF1206,115 datasheets

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Specifications of BF1206,115

Package / CaseSC-70-6, SC-88, SOT-363Transistor TypeN-Channel Dual Gate
Frequency400MHzGain30dB
Voltage - Rated6VCurrent Rating30mA
Noise Figure1.3dBCurrent - Test18mA
Voltage - Test5VConfigurationDual Dual Gate
Continuous Drain Current30 mADrain-source Breakdown Voltage6 V
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 65 C
Mounting StyleSMD/SMTPower Dissipation180 mW
Transistor PolarityN-ChannelLead Free Status / RoHS StatusLead free / RoHS Compliant
Power - Output-Other names934057297115
BF1206
BF1206
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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BF1206
Dual N-channel dual-gate
MOS-FET
Product specification
2003 Nov 17

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BF1206,115 Summary of contents

  • Page 1

    DATA SHEET handbook, halfpage BF1206 Dual N-channel dual-gate MOS-FET Product specification DISCRETE SEMICONDUCTORS MBD128 2003 Nov 17 ...

  • Page 2

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET FEATURES  Two low noise gain controlled amplifiers in a single package  Superior cross-modulation performance during AGC  High forward transfer admittance  High forward transfer admittance to input capacitance ratio. APPLICATIONS  Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners ...

  • Page 3

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. ORDERING INFORMATION TYPE NUMBER NAME  BF1206 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per MOS-FET; unless otherwise specified ...

  • Page 4

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 200 handbook, halfpage P tot (mW) 150 100 100 Fig.2 Power derating curve. STATIC CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER Per MOS-FET unless otherwise specified V drain-source breakdown voltage (BR)DSS V gate-source breakdown voltage (BR)G1-SS V gate-source breakdown voltage ...

  • Page 5

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET DYNAMIC CHARACTERISTICS AMPLIFIER C; V Common source; T amb SYMBOL PARAMETER y  forward transfer admittance fs C input capacitance at gate 1 ig1-ss C input capacitance at gate 2 ig2-ss C output capacitance oss C reverse transfer capacitance MHz rss NF noise figure G power gain ...

  • Page 6

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET GRAPHS FOR AMPLIFIER a 30 handbook, halfpage I D (mA 0  ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2-S Fig.3 Transfer characteristics; typical values; amplifier a. 2003 Nov 17 MLE258 handbook, halfpage (1) (2) (4) (3) (5) (6) (7) 1 G1 ...

  • Page 7

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 100 handbook, halfpage I G1 (μ 0  ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2-S Fig.5 Gate 1 current as a function of gate 1 voltage; typical values; amplifier a. 24 handbook, halfpage I D (mA  G2-S j Fig.7 Drain current as a function of gate 1 current; ...

  • Page 8

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 40 handbook, halfpage I D (mA  150 k (connected k k k k. G1 Fig.9 Drain current as a function of gate 1 (V and drain supply voltage; typical values; amplifier a. 2003 Nov 17 MLE288 handbook, halfpage (1) (2) (3) (4) (5) (6) ...

  • Page 9

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 50 handbook, halfpage I G1 (μ  k (connected see Fig. 4 Fig.11 Gate 1 current as a function of gate 2 voltage; typical values; amplifier a. 0 handbook, halfpage gain reduction (dB) −10 −20 −30 −40 − k MHz see Fig.35. Fig.13 Typical gain reduction as a function of AGC voltage ...

  • Page 10

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 2 10 handbook, halfpage Y is (mS − mA amb Fig.15 Input admittance as a function of frequency; typical values; amplifier handbook, halfpage (mS) 10 −ϕ mA amb Fig.17 Forward transfer admittance and phase as a function of frequency; typical values; amplifier a. 2003 Nov 17 ...

  • Page 11

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET Amplifier a scattering parameters mA G2 MAGNITUDE ANGLE (MHz) (ratio) (deg) 4.62 50 0.988 9.23 100 0.984 18.33 200 0.971 27.32 300 0.951 36.04 400 0.926 44.50 500 0.896 52.63 600 0.865 60.47 700 0.832 67.66 800 0.797  ...

  • Page 12

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET DYNAMIC CHARACTERISTICS AMPLIFIER C; V Common source; T amb SYMBOL PARAMETER y  forward transfer admittance fs C input capacitance at gate 1 ig1-ss C input capacitance at gate 2 ig2-ss C output capacitance oss C reverse transfer capacitance MHz rss F noise figure G power gain ...

  • Page 13

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET GRAPHS FOR AMPLIFIER b 30 handbook, halfpage I D (mA 0  ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2-S Fig.19 Transfer characteristics; typical values; amplifier b. 2003 Nov 17 MLE272 handbook, halfpage (1) (2) (4) (3) (5) (6) (7) 1 G1 ...

  • Page 14

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 100 handbook, halfpage I G1 (μ 0  ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2-S Fig.21 Gate 1 current as a function of gate 1 voltage; typical values; amplifier b. 24 handbook, halfpage I D (mA  G2-S j Fig.23 Drain current as a function of gate 1 current; ...

  • Page 15

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 24 handbook, halfpage I D (mA  G2 150 k (connected see Fig.35 ( 270 k 220 k 180 k 150 k. G1 Fig.25 Drain current as a function of gate 1 (V and drain supply voltage; typical values; amplifier b. 2003 Nov 17 MLE278 handbook, halfpage ...

  • Page 16

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 30 handbook, halfpage I G1 (μ  150 k (connected see Fig. 4 Fig.27 Gate 1 current as a function of gate 2 voltage; typical values; amplifier b. 0 handbook, halfpage gain reduction (dB) −10 −20 −30 −40 − 150 k MHz see Fig.35. ...

  • Page 17

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET 2 10 handbook, halfpage Y is (mS −1 10 − mA amb Fig.31 Input admittance as a function of frequency; typical values; amplifier handbook, halfpage (mS) 10 −ϕ mA amb Fig.33 Forward transfer admittance and phase as a function of frequency; typical values; amplifier b. 2003 Nov 17 ...

  • Page 18

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET handbook, full pagewidth R GEN 50 Ω Fig.35 Cross-modulation test set-up (for one MOS-FET). Amplifier b scattering parameters mA G2 MAGNITUDE ANGLE (MHz) (ratio) (deg) 3.43 50 0.991 6.84 100 0.989 13.61 200 0.982 20.37 300 0.973 27.05 400 0.961  ...

  • Page 19

    ... NXP Semiconductors Dual N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2003 Nov scale 2.2 1.35 2.2 1.3 0.65 1 ...

  • Page 20

    ... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

  • Page 21

    ... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

  • Page 22

    ... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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