BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 15

• Manufacturer Part Number: BF1206,115
• Description: MOSFET N-CH DUAL GATE 6V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1206,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057297115; BF1206; BF1206

NXP Semiconductors
2003 Nov 17
handbook, halfpage
Dual N-channel dual-gate MOS-FET
(1) R
(2) R
(3) R
(4) R
Fig.25 Drain current as a function of gate 1 (V
V
R
(mA)
G2-S
G1
I D
= 150 k (connected to V
24
16
8
0
= 4 V; T
G1
G1
G1
G1
0
= 270 k.
= 220 k.
= 180 k.
= 150 k.
and drain supply voltage; typical values;
amplifier b.
j
= 25 C.
2
GG
); see Fig.35.
4
(5) R
(6) R
(7) R
V GG = V DS (V)
G1
G1
G1
= 120 k.
= 100 k.
= 82 k.
6
(1)
(2)
(3)
(4)
(5)
(6)
(7)
MLE278
8
GG
)
15
handbook, halfpage
V
R
(1) V
(2) V
(3) V
Fig.26 Drain current as a function of gate 2
DS
G1
(mA)
I D
= 5 V; T
= 150 k (connected to V
16
12
GG
GG
GG
8
4
0
0
= 5 V.
= 4.5 V.
= 4 V.
voltage; typical values; amplifier b.
j
= 25 C.
2
GG
(4) V
(5) V
); see Fig.35.
GG
GG
= 3.5 V.
= 3 V.
4
Product specification
V G2-S (V)
(1)
(2)
(3)
(4)
(5)
BF1206
MLE279
6