PD55003STR-E STMicroelectronics, PD55003STR-E Datasheet - Page 6

• Manufacturer Part Number: PD55003STR-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD55003STR-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2.5A
• Current - Test: 50mA
• Voltage - Test: 12.5V
• Power - Output: 3W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 2.5A
• Drain Source Voltage (max): 40V
• Output Power (max): 3W(Min)
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 1S
• Input Capacitance (typ)@vds: 36@12.5VpF
• Output Capacitance (typ)@vds: 24@12.5VpF
• Reverse Capacitance (typ): 2.4@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 52%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 31700mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Typical performance
4
6/29
Figure 3.
Figure 5.
100
1.06
1.04
1.02
0.98
0.96
0.94
10
1
1
0
-25
f= 1 MHz
Vds= 10 V
Typical performance
Capacitance vs drain voltage
Gate-source voltage vs case
temperature
5
0
Tc, CASE TEMPERATURE (°C)
VDD, DRAIN VOLTAGE (V)
10
25
15
Coss
Ciss
Crss
50
20
Id= 2.5 A
Id= .25 A
75
Id= 2 A
25
Doc ID 12273 Rev 3
Id= 1.5 A
Id= 1 A
Id= .5 A
100
30
Figure 4.
2.5
1.5
0.5
2
0
1
2
2.5
Drain current vs gate-source
voltage
3
VGS, GATE-SOURCE VOLTAGE (V)
3.5
PD55003-E, PD55003S-E
4
4.5
5
Vdd=10V
5.5
6