PD55003STR-E STMicroelectronics, PD55003STR-E Datasheet - Page 9

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PD55003STR-E

Manufacturer Part Number
PD55003STR-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD55003STR-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
2.5A
Current - Test
50mA
Voltage - Test
12.5V
Power - Output
3W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
2.5A
Drain Source Voltage (max)
40V
Output Power (max)
3W(Min)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Forward Transconductance (typ)
1S
Input Capacitance (typ)@vds
36@12.5VpF
Output Capacitance (typ)@vds
24@12.5VpF
Reverse Capacitance (typ)
2.4@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
52%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
31700mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55003STR-E
Manufacturer:
ST
Quantity:
20 000
PD55003-E, PD55003S-E
Figure 15. Output power vs gate voltage
5
4
3
2
0
1
0
1
VGS, GATE-SOURCE VOLTAGE (V)
500 MHz
2
480 MHz
520 MHz
3
Vdd = 12.5 V
Pin=17.9 dBm
Tune for Po=3 W
4
Doc ID 12273 Rev 3
5
Typical performance
9/29

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