PD55008STR-E STMicroelectronics, PD55008STR-E Datasheet - Page 6

• Manufacturer Part Number: PD55008STR-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD55008STR-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 4A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 8W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4A
• Drain Source Voltage (max): 40V
• Output Power (max): 8W
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 1.6S
• Input Capacitance (typ)@vds: 58@12.5VpF
• Output Capacitance (typ)@vds: 38@12.5VpF
• Reverse Capacitance (typ): 2.8@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 52800mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Typical performance
4
6/25
Figure 3.
Figure 5.
1000
100
1.06
1.04
1.02
0.98
0.96
0.94
0.92
10
1
1
0
-25
f=1 MHz
V
DS
Typical performance
Capacitance vs. drain voltage
Gate-source voltage vs. case
temperature
= 10 V
5
0
Tc, CASE TEMPERATURE (°C)
VDD, DRAIN VOLTAGE (V)
10
25
15
50
I
D
= .5A
20
75
Coss
Crss
Doc ID 12259 Rev 2
I
Ciss
D
=
I
D
I
.25A
D
= 2A
= 1.5A
I
D
= 1A
100
25
Figure 4.
4
3
0
2
1
1
Drain current vs. gate-source
voltage
2
VGS, GATE-SOURCE VOLTAGE (V )
3
PD55008-E, PD55008S-E
4
5
Vds = 10 V
6