PD55008STR-E STMicroelectronics, PD55008STR-E Datasheet - Page 8

• Manufacturer Part Number: PD55008STR-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD55008STR-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 4A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 8W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4A
• Drain Source Voltage (max): 40V
• Output Power (max): 8W
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 1.6S
• Input Capacitance (typ)@vds: 58@12.5VpF
• Output Capacitance (typ)@vds: 38@12.5VpF
• Reverse Capacitance (typ): 2.8@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 52800mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Typical performance
8/25
Figure 12. Output power vs. supply voltage
Figure 14. Output power vs. gate-source
Figure 15. Drain efficiecy vs. output power
10
12
13
10
12
11
8
6
4
2
0
9
8
7
6
5
4
3
60
50
40
30
20
10
0
9
1
2
10
voltage
1
VGS, GATE-SOURCE VOLTAGE (V)
3
VDD, SUPPLY VOLTAGE (V)
11
4
Output Power (W)
500 MHz
500 MHz
2
12
5
6
13
480 MHz
850 MHz
3
7
800 MHz
Idq= 150 mA
Pin= 21.7 dBm
480 MHz
V
Pin= 21.7 dBm
520 MHz
Idq = 250mA
Vdd = 12.5V
DD
= 12.5 V
520 MHz
14
Doc ID 12259 Rev 2
8
900 MHz
9
4
15
Figure 13. Drain efficiency vs. supply voltage
Table 8.
Figure 16. Input return loss vs. output power
-10
-15
-20
-25
-30
70
60
50
40
30
20
10
-5
8
6
4
2
0
0
9
0
0
900 MHz
850 MHz
1
800 MHz
10
0.1
Output power vs. input power
2
VDD, SUPPLY VOLTAGE (V)
11
0.2
3
Output Power (W)
Input Power (W)
4
PD55008-E, PD55008S-E
12
0.3
480 MHz
800 MHz
5
13
0.4
6
850 MHz
520 MHz
500 MHz
Idq= 150 mA
Pin= 21.7 dBm
900 MHz
14
Idq = 250mA
7
Vdd = 12.5V
Idq = 250mA
0.5
Vdd = 12.5V
8
15
0.6
9