MRF6S27050HR3 Freescale Semiconductor, MRF6S27050HR3 Datasheet - Page 5

• Manufacturer Part Number: MRF6S27050HR3
• Description: IC MOSFET RF N-CHAN NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S27050HR3

• Transistor Type: N-Channel
• Frequency: 2.62GHz
• Gain: 16dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 500mA
• Voltage - Test: 28V
• Power - Output: 7W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
20
19
18
17
16
15
14
13
12
1
125 mA
750 mA
500 mA
250 mA
Figure 5. Two - Tone Power Gain versus
I
DQ
= 1000 mA
P
out
, OUTPUT POWER (WATTS) PEP
V
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
Output Power
DD
= 28 Vdc
Figure 3. Single - Carrier W - CDMA Broadband Performance
Figure 4. Single - Carrier W - CDMA Broadband Performance
10
19
18
17
16
15
14
13
12
11
19
18
17
16
15
14
13
12
11
2500
2500
G
G
IRL
IRL
η
η
ACPR
ACPR
ps
ps
D
D
ALT1
2520
2520
ALT1
2540
2540
TYPICAL CHARACTERISTICS
V
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
DD
2560
2560
@ P
= 28 Vdc, P
@ P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
out
out
2580
2580
V
I
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
DQ
DD
100
= 14 Watts Avg.
= 7 Watts Avg.
= 500 mA, Single−Carrier W−CDMA
= 28 Vdc, P
out
2600
2600
= 7 W (Avg.), I
2620
2620
out
= 14 W (Avg.)
−15
−20
−25
−30
−35
−40
−45
−50
−55
2640
2640
DQ
0.5
Figure 6. Third Order Intermodulation Distortion
= 500 mA
V
Two−Tone Measurements
2660
2660
DD
250 mA
= 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
1
2680
2680
I
DQ
1000 mA
P
= 125 mA
2700
out
2700
MRF6S27050HR3 MRF6S27050HSR3
, OUTPUT POWER (WATTS) PEP
versus Output Power
24
23
22
21
20
−40
−50
−60
−70
34
33
32
31
30
−30
−40
−50
−60
−5
−10
−15
−20
−5
−10
−15
−20
−25
−25
10
750 mA
500 mA
100
5