MRF6S27050HR3 Freescale Semiconductor, MRF6S27050HR3 Datasheet - Page 7

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MRF6S27050HR3

Manufacturer Part Number
MRF6S27050HR3
Description
IC MOSFET RF N-CHAN NI-780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S27050HR3

Transistor Type
N-Channel
Frequency
2.62GHz
Gain
16dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
500mA
Voltage - Test
28V
Power - Output
7W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

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Manufacturer
Quantity
Price
Company:
Part Number:
MRF6S27050HR3
Quantity:
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RF Device Data
Freescale Semiconductor
20
19
18
17
16
15
14
13
12
35
30
25
20
15
10
0.1
34
G
η
V
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
Figure 13. Drain Efficiency and Error Vector
Figure 11. Power Gain and Drain Efficiency
ps
DD
D
= 28 Vdc, I
35
Magnitude versus Output Power
η
D
P
versus CW Output Power
36
T
out
DQ
C
, OUTPUT POWER (WATTS) CW
P
= −30_C
= 500 mA
out
1
25_C
85_C
, OUTPUT POWER (dBm)
37
38
EVM
V
I
f = 2600 MHz
DQ
39
DD
= 500 mA
10
= 28 Vdc
40
−30_C
TYPICAL CHARACTERISTICS
41
85_C
25_C
100
42
64
56
48
40
32
24
16
8
0
6
5
4
3
2
1
10
10
10
10
Figure 14. MTTF Factor versus Junction Temperature
17
16
15
14
9
8
7
6
90
0.3
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. Power Gain versus Output Power
110
10
130
T
DD
J
P
, JUNCTION TEMPERATURE (°C)
out
20
= 28 Vdc, P
MRF6S27050HR3 MRF6S27050HSR3
, OUTPUT POWER (WATTS) CW
150
V
DD
30
= 24 V
out
170
= 7 W Avg., and η
40
190
28 V
50
210
D
I
f = 2600 MHz
= 22.5%.
DQ
= 500 mA
60
230
32 V
250
70
7

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