MRF6S27050HR3 Freescale Semiconductor, MRF6S27050HR3 Datasheet - Page 6

• Manufacturer Part Number: MRF6S27050HR3
• Description: IC MOSFET RF N-CHAN NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S27050HR3

• Transistor Type: N-Channel
• Frequency: 2.62GHz
• Gain: 16dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 500mA
• Voltage - Test: 28V
• Power - Output: 7W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF6S27050HR3 MRF6S27050HSR3
6
−70
−10
−20
−30
−40
−50
−60
1
Figure 7. Intermodulation Distortion Products
V
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
DD
5th Order
3rd Order
= 28 Vdc, I
P
out
DQ
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 500 mA
7th Order
10
Figure 10. Single - Carrier W - CDMA ACPR, ALT1, Power
54
53
52
51
50
49
48
47
46
45
44
50
45
40
35
30
25
20
15
10
5
0
27
0.2
Gain and Drain Efficiency versus Output Power
P1dB = 46.91 dBm (49.06 W)
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
η
DD
Figure 9. Pulsed CW Output Power versus
D
28
= 28 Vdc, I
TYPICAL CHARACTERISTICS
P
out
29
P3dB = 47.44 dBm (55.46 W)
, OUTPUT POWER (WATTS) AVG. W−CDMA
DQ
30
= 500 mA, f = 2600 MHz
1
P
P6dB = 47.88 dBm (61.38 W)
in
G
100
, INPUT POWER (dBm)
ps
Input Power
31
V
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
DD
= 28 Vdc, I
32
−10
−15
−20
−25
−30
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−45
−50
−55
−5
33
DQ
0.1
Figure 8. Intermodulation Distortion Products
= 500 mA
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
34
DD
10
= 28 Vdc, P
ALT1
35
Ideal
36
Actual
ACPR
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
= 50 W (PEP), I
1
40
37
IM5−L
IM5−U
IM3−U
IM3−L
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
DQ
Freescale Semiconductor
IM7−U
IM7−L
= 500 mA
10
RF Device Data
100