MRF6S19200HR3 Freescale Semiconductor, MRF6S19200HR3 Datasheet - Page 12

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MRF6S19200HR3

Manufacturer Part Number
MRF6S19200HR3
Description
MOSFET RF N-CH 56W 28V NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S19200HR3

Transistor Type
N-Channel
Frequency
1.93GHz
Gain
17.9dB
Voltage - Rated
66V
Current Rating
10µA
Current - Test
1.6A
Voltage - Test
28V
Power - Output
56W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
66V
Output Power (max)
56W
Power Gain (typ)@vds
17.9dB
Frequency (min)
1.93GHz
Frequency (max)
1.99GHz
Package Type
NI-780
Pin Count
3
Input Capacitance (typ)@vds
503@28VpF
Output Capacitance (typ)@vds
185@28VpF
Reverse Capacitance (typ)
2.3@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
29.5%
Mounting
Screw
Mode Of Operation
1-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6S19200HR3
Manufacturer:
FREESCALE
Quantity:
20 000
MRF6S19200HR3 MRF6S19200HSR3
12
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Document Number: MRF6S19200H
Rev. 0, 3/2008
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RF Device Data

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