MRF6S19200HR3 Freescale Semiconductor, MRF6S19200HR3 Datasheet - Page 6

• Manufacturer Part Number: MRF6S19200HR3
• Description: MOSFET RF N-CH 56W 28V NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S19200HR3

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 17.9dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 1.6A
• Voltage - Test: 28V
• Power - Output: 56W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 56W
• Power Gain (typ)@vds: 17.9dB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 503@28VpF
• Output Capacitance (typ)@vds: 185@28VpF
• Reverse Capacitance (typ): 2.3@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 29.5%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF6S19200HR3 MRF6S19200HSR3
6
20
19
18
17
16
15
14
1
800 mA
I
DQ
2000 mA
1600 mA
1200 mA
Figure 5. Two - Tone Power Gain versus
= 2400 mA
P
out
, OUTPUT POWER (WATTS) PEP
V
Two−Tone Measurements, 10 MHz Tone Spacing
DD
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Output Power
10
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
21
20
19
18
17
16
15
14
13
20
19
18
17
16
15
14
13
12
1880
1880
IRL
PARC
PARC
Broadband Performance @ P
Broadband Performance @ P
IRL
G
G
η
ps
ps
D
1900
1900
η
V
I
3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability (CCDF)
DQ
D
DD
TYPICAL CHARACTERISTICS
= 1600 mA, Single−Carrier W−CDMA
= 28 Vdc, P
1920
1920
100
V
I
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
DQ
DD
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
= 1600 mA, Single−Carrier W−CDMA
1940
1940
= 28 Vdc, P
out
200
= 56 W (Avg.)
1960
1960
out
= 87 W (Avg.)
1980
1980
out
out
−10
−20
−30
−40
−50
−60
0
= 56 Watts Avg.
= 87 Watts Avg.
2000
2000
1
Figure 6. Third Order Intermodulation Distortion
I
V
Two−Tone Measurements, 10 MHz Tone Spacing
DQ
DD
= 800 mA
2020
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
2020
2400 mA
P
out
2040
2040
, OUTPUT POWER (WATTS) PEP
versus Output Power
31
30
29
28
−0.5
−1
−1.5
−2
38
37
36
35
−2
−2.5
−3
−3.5
−2.5
−4
10
1600 mA
0
−5
−10
−15
−20
−5
−10
−15
−20
−25
Freescale Semiconductor
1200 mA
RF Device Data
2000 mA
100
200