MRF6S19200HR3 Freescale Semiconductor, MRF6S19200HR3 Datasheet - Page 2

• Manufacturer Part Number: MRF6S19200HR3
• Description: MOSFET RF N-CH 56W 28V NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S19200HR3

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 17.9dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 1.6A
• Voltage - Test: 28V
• Power - Output: 56W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 56W
• Power Gain (typ)@vds: 17.9dB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 503@28VpF
• Output Capacitance (typ)@vds: 185@28VpF
• Reverse Capacitance (typ): 2.3@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 29.5%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF6S19200HR3 MRF6S19200HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 66 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 10 Vdc, I
DS
D
D
D
GS
GS
GS
= 372 μAdc)
= 1600 mAdc, Measured in Functional Test)
= 3.71 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
ACPR
I
I
I
C
PAR
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
η
= 1600 mA, P
oss
rss
iss
ps
D
Min
0.1
5.5
—
—
—
—
—
—
15
26
—
—
1
2
out
= 56 W Avg., f = 1932.5 MHz and
17.9
29.5
Typ
185
503
2.3
- 36
- 14
0.2
5.9
—
—
—
2
3
1B (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
- 34
0.3
10
10
19
—
—
—
—
—
- 8
1
3
4
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
pF
pF
%