MRF6V14300HR5 Freescale Semiconductor, MRF6V14300HR5 Datasheet

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MRF6V14300HR5

Manufacturer Part Number
MRF6V14300HR5
Description
MOSFET RF N-CH 50V NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V14300HR5

Transistor Type
N-Channel
Frequency
1.4GHz
Gain
18dB
Voltage - Rated
100V
Current Rating
10µA
Current - Test
150mA
Voltage - Test
50V
Power - Output
330W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6V14300HR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
• Typical Pulsed Performance: V
• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
RF Power transistors designed for applications operating at frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300
Duty Cycle = 12%
Power
Operation
Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
Power Gain — 18 dB
Drain Efficiency — 60.5%
calculators by product.
Select Documentation/Application Notes -- AN1955.
(1,2)
Characteristic
DD
Rating
= 50 Volts, I
DD
Operation
DQ
= 150 mA, P
out
=
μ
sec,
Symbol
Symbol
V
Z
V
T
T
DSS
T
θJC
GS
stg
Document Number: MRF6V14300H
C
J
MRF6V14300HR3 MRF6V14300HSR3
MRF6V14300HSR3
CASE 465- -06, STYLE 1
MRF6V14300HR3
CASE 465A- -06, STYLE 1
MRF6V14300HR3
MRF6V14300HSR3
LATERAL N- -CHANNEL
1400 MHz, 330 W, 50 V
RF POWER MOSFETs
NI- -780
NI- -780S
-- 65 to +150
--0.5, +100
Value
--6.0, +10
Value
PULSED
0.13
150
225
(2,3)
Rev. 3, 4/2010
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6V14300HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor = 150 mA, P ...

Page 2

... W Peak (39.6 W Avg.), f = 1400 MHz, out 16.5 18 19.5 dB (2) (2) 59 60.5 — % — --12 -- 150 mA 330 W Peak DQ out = — 10 — ° — 0.5 — dB — 0.3 — dB — --20 — dBc — --65 — dBc All Spurs Below --60 dBc No Degradation in Output Power . DQ RF Device Data Freescale Semiconductor ...

Page 3

... Chip Capacitor C5 2.2 μF, 100 V Chip Capacitor C6 470 μ Electrolytic Capacitor C7 330 pF Electrolytic Capacitor C8 0.1 μ Chip Capacitor C9 10 μ Tantalum Capacitor R1 10 Ω, 1/4 W Chip Resistor RF Device Data Freescale Semiconductor C4 R1 Z23 + C9 C8 Z22 Z13 Z14 Z8 Z9 Z10 Z11 ...

Page 4

... Figure 2. MRF6V14300HR3(HSR3) Test Circuit Component Layout MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300 Rev Device Data Freescale Semiconductor ...

Page 5

... Vdc 1400 MHz DD Pulse Width = 300 μsec, Duty Cycle = 12 100 P , OUTPUT POWER (WATTS) PULSED out Figure 7. Pulsed Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 160 140 120 100 Vdc 1200 MHz, Pulse Width = 300 μsec 0 40 ...

Page 6

... Figure 12. MTTF versus Junction Temperature --30_C 25_C 55_C 85_C G ps η Vdc 150 mA 1400 MHz DD DQ Pulse Width = 300 μsec, Duty Cycle = 12% 100 P , OUTPUT POWER (WATTS) PULSED out versus Output Power --5 --10 --15 --20 --25 1375 1400 = 330 Watts Peak 230 250 RF Device Data Freescale Semiconductor 400 ...

Page 7

... Ω load Figure 13. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 1400 MHz f = 1400 MHz 1200 MHz source f = 1200 MHz Vdc 150 mA 330 W Peak DD DQ out f Z source MHz Ω 1200 2.70 -- j4.10 2.97 -- j2.66 1300 4.93 -- j2.66 2.85 -- j2.40 1400 7 ...

Page 8

... N 0.772 0.788 19.61 20. 0.365 0.375 9.27 9.53 S 0.365 0.375 9.27 9.52 U ------ 0.040 ------ 1.02 ------ 0.030 ------ 0.76 Z aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF F ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...

Page 9

... Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added • Reporting of pulsed thermal data now shown using the Z • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description symbol θJC ...

Page 10

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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