MRF6V14300HR5 Freescale Semiconductor, MRF6V14300HR5 Datasheet - Page 2

• Manufacturer Part Number: MRF6V14300HR5
• Description: MOSFET RF N-CH 50V NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V14300HR5

• Transistor Type: N-Channel
• Frequency: 1.4GHz
• Gain: 18dB
• Voltage - Rated: 100V
• Current Rating: 10µA
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 330W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
MRF6V14300HR3 MRF6V14300HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) V
(39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, Pulsed, 300 μsec Pulse Width, 12% Duty Cycle, t
1. Part internally matched both on input and output.
2. Drain efficiency is calculated by: η
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
Relative Insertion Phase
Gain Flatness
Pulse Amplitude Droop
Harmonic 2nd and 3rd
Spurious Response
Load Mismatch Stability
Load Mismatch Tolerance
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(VSWR = 3:1 at all Phase Angles)
(VSWR = 5:1 at all Phase Angles)
GS
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 Vdc, V
= 0 Vdc, I
= 50 Vdc, V
= 90 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
D
DS
D
D
D
= 100 mA)
GS
GS
GS
= 662 μAdc)
= 150 mAdc, Measured in Functional Test)
= 1.63 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
Characteristic
Test Methodology
D
=
(T
A
V
100 × P
DD
= 25°C unless otherwise noted)
GS
GS
× I
= 0 Vdc)
= 0 Vdc)
peak
out
where: I
DD
peak
= 50 Vdc, I
= (I
AVG
DQ
VSWR--S
VSWR--T
H2 & H3
-- I
Symbol
V
V
V
V
I
I
I
C
DS(on)
C
|∆Φ|
(BR)DSS
GS(th)
GS(Q)
C
G
= 150 mA, P
IRL
D
DQ
GSS
DSS
DSS
η
G
oss
rss
iss
DD
ps
D
rp
F
) / Duty Cycle (%) + I
= 50 Vdc, I
out
59
16.5
Min
100
0.9
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
(2)
DQ
= 330 W Peak (39.6 W Avg.), f = 1400 MHz,
No Degradation in Output Power
= 150 mA, P
All Spurs Below --60 dBc
DQ
60.5
0.26
Typ
.
350
330
--12
--20
--65
1.6
2.4
0.6
0.5
0.3
18
10
—
—
—
—
1C (Minimum)
IV (Minimum)
A (Minimum)
(2)
out
Class
Freescale Semiconductor
= 330 W Peak
r
= 50 ns
Max
19.5
2.5
2.4
10
50
—
—
—
—
—
—
--9
—
—
—
—
—
3
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
mA
dB
dB
dB
dB
pF
pF
pF
%
°