MRF6V14300HR5 Freescale Semiconductor, MRF6V14300HR5 Datasheet - Page 6

• Manufacturer Part Number: MRF6V14300HR5
• Description: MOSFET RF N-CH 50V NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V14300HR5

• Transistor Type: N-Channel
• Frequency: 1.4GHz
• Gain: 18dB
• Voltage - Rated: 100V
• Current Rating: 10µA
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 330W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF6V14300HR3 MRF6V14300HSR3
400
300
200
100
0
0
Figure 9. Pulsed Output Power versus
1
P
in
, INPUT POWER (WATTS) PULSED
2
V
Pulse Width = 300 μsec, Duty Cycle = 12%
Input Power
DD
T
C
= 50 Vdc, I
= --30_C
3
Figure 11. Broadband Performance @ P
10
10
10
10
19
18
17
16
15
14
13
12
10
11
DQ
9
1200
8
7
6
5
90
= 150 mA, f = 1400 MHz
This above graph displays calculated MTTF in hours when the device
is operated at V
Duty Cycle = 12%, and η
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
4
V
Pulse Width = 300 μsec, Duty Cycle = 12%
DD
1225
110
= 50 Vdc, I
TYPICAL CHARACTERISTICS
G
η
IRL
ps
D
5
1250
130
85_C
T
DD
J
25_C
DQ
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
= 150 mA, P
1275
f, FREQUENCY (MHz)
150
6
D
= 60.5%.
out
1300
170
out
= 330 W Peak, Pulse Width = 300 μsec,
24
22
20
18
16
Figure 10. Pulsed Power Gain and Drain Efficiency
= 330 W Peak (39.6 W Avg.)
50
85_C
1325
T
25_C
190
C
= --30_C
55_C
1350
out
210
V
Pulse Width = 300 μsec, Duty Cycle = 12%
P
DD
out
= 330 Watts Peak
= 50 Vdc, I
, OUTPUT POWER (WATTS) PULSED
versus Output Power
1375
230
100
η
G
D
DQ
1400
ps
250
= 150 mA, f = 1400 MHz
63
62
61
60
59
0
--5
--10
--15
--20
--25
Freescale Semiconductor
55_C
25_C
RF Device Data
--30_C
85_C
400
70
58
46
34
22