TRANSISTOR RF POWER LDMOST M252

SD56150

Manufacturer Part NumberSD56150
DescriptionTRANSISTOR RF POWER LDMOST M252
ManufacturerSTMicroelectronics
SD56150 datasheet
 


Specifications of SD56150

Transistor TypeLDMOSFrequency860MHz
Gain16.5dBVoltage - Rated65V
Current Rating17ACurrent - Test500mA
Voltage - Test32VPower - Output150W
Package / CaseM252Lead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-  
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Features
Excellent thermal stability
Common source configuration Push-pull
P
= 150W with 13dB gain @ 860MHz / 32V
OUT
BeO free package
Internal input matching
In compliance with the 2002/95/EC european
directive
Description
The SD56150 is a common source N-channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56150 is designed for high
gain and broadband performance operating in
common source mode at 32 V. Its internal
matching makes it ideal for TV broadcast
applications requiring high linearity.
Table 1.
Device summary
Order code
SD56150
August 2007
RF power transistor
the LdmoST family
M252
Epoxy sealed
Figure 1.
Pin connection
1
5
1. Drain
2. Drain
3. Source
Package
M252
Rev 7
SD56150
2
3
4
4. Gate
5. Gate
Branding
SD56150
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www.st.com
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SD56150 Summary of contents

  • Page 1

    ... The SD56150 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56150 is designed for high gain and broadband performance operating in common source mode Its internal matching makes it ideal for TV broadcast applications requiring high linearity ...

  • Page 2

    ... Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 SD56150 ...

  • Page 3

    ... SD56150 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS Tj T STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature ...

  • Page 4

    ... MHz MHz MHz DS Test conditions = 500 860MHz DQ = 500 150 W,f = 860MHz DQ OUT = 500 150 W,f = 860MHz DQ OUT = 500 150 W,f = 860MHz DQ OUT SD56150 Min Typ Max Unit 65 V µA 1 µA 1 2.0 5.0 V 0.5 0.8 V 2.5 4 mho 255 2.9 pF Min Typ Max ...

  • Page 5

    ... SD56150 3 Impedance Figure 2. Current conventions Table 6. Impedance data Freq. (MHz) 860 MHz 880 MHz 900 MHz Note: Measured drain to drain and gate to gate respectively. Z (Ω 5.5 4 6.9 4 8.8 Impedance Z (Ω 6.5 3 7.4 4 7.8 5/14 ...

  • Page 6

    ... Typical performance 4 Typical performance Figure 3. Capacitance vs drain voltage 1000 100 MHz Vdd (V) Figure 5. Drain current vs gate voltage (V) 6/14 Figure Figure SD56150 Gate-source voltage vs case temperature (°C ) Output power vs input power MHz Pin ( ...

  • Page 7

    ... SD56150 Figure 7. Power gain vs output power MHz Figure 9. Output power vs supply voltage MHz (V) Figure 8. Efficiency vs output power Pin = 5 W Pin = Pin = Typical performance MHz 7/14 ...

  • Page 8

    ... Typical performance Figure 10. Efficiency vs supply voltage MHz (V) Test circuit 8/14 Figure 11. Intermodulation distorsion vs output power Pin = Pin = SD56150 MHz MHz ...

  • Page 9

    ... SD56150 Figure 12. Test circuit schematic 1 Gap between ground & transmission line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] Typ and C4 adjacent to each other Typical performance REF. 7248365A 9/14 ...

  • Page 10

    ... OHM 1/4 W SURFACE MOUNT CHIP RESISTOR 1.8 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR CHIP INDUCTOR 10 nH SURFACE MOUNT COIL SURFACE MOUNT EMI SHIELD BEAD BALUN, 25 OHM, SEMI-RIDGE OD 0.141 2.365 LG COAXIAL CABLE OR EQUIVALENT WOVEN GLASS REINFORCED / CERAMIC FILLED 0.030” THK εr = 3.48 BOTH SIDES SD56150 ...

  • Page 11

    ... SD56150 Figure 13. Test fixture Figure 14. Test circuit photomaster Typical performance 6.4 inches 11/14 ...

  • Page 12

    ... SD56150 Inch Min Typ Max .320 .340 .425 .118 .130 .380 .390 .085 .115 .865 .875 1.100 1.335 1.345 .004 .006 ...

  • Page 13

    ... SD56150 6 Revision history Table 9. Document revision history Date 12-Sep-2003 23-Jul-2007 24-Aug-2007 Revision 5 First Issue 6 Document reformatted, added lead free info 7 Cover page title updated Revision history Changes 13/14 ...

  • Page 14

    ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com SD56150 ...