PD55008TR STMicroelectronics, PD55008TR Datasheet

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PD55008TR

Manufacturer Part Number
PD55008TR
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheets

Specifications of PD55008TR

Transistor Type
LDMOS
Frequency
500MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
4A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
8W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4A
Drain Source Voltage (max)
40V
Output Power (max)
8W(Min)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
1.6S
Input Capacitance (typ)@vds
58@12.5VpF
Output Capacitance (typ)@vds
38@12.5VpF
Reverse Capacitance (typ)
2.8@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
52800mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55008TR-E
Manufacturer:
ST
0
Part Number:
PD55008TR-E
Manufacturer:
ST
Quantity:
20 000
www.st.com/rf/ (look for application note AN1294)
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55008 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies up
to 1 GHz.
PD55008 boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology mount-
ed in the first true SMD plastic RF power package,
PowerSO-10RF. PD55008’s superior linearity per-
formance makes it an ideal solution for car mobile
radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL DATA
March, 21 2003
V
Symbol
Mounting recommendations are available in
R
(BR)DSS
OUT
P
T
V
th(j-c)
DISS
STG
I
Tj
GS
D
= 8 W with 17 dB gain @ 500 MHz / 12.5V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
Junction -Case Thermal Resistance
Parameter
CASE
= 25
°
C)
The LdmoST Plastic FAMILY
RF POWER TRANSISTORS
ORDER CODE
ORDER CODE
PD55008S
PD55008
PowerSO-10RF
PowerSO-10RF
(formed lead)
(straight lead)
-65 to +150
Value
52.8
165
1.8
40
4
20
PD55008S
PD55008
BRANDING
BRANDING
PD55008S
PD55008
°C/W
Unit
°C
°C
W
V
V
A
1/18

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PD55008TR Summary of contents

Page 1

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • with 17 dB gain @ 500 MHz / 12.5V OUT • NEW RF PLASTIC PACKAGE DESCRIPTION The PD55008 is a common source N-Channel, ...

Page 2

PD55008 - PD55008S ELECTRICAL SPECIFICATION (T STATIC Symbol DSS GSS GS( DS(ON ...

Page 3

TYPICAL PERFORMANCE Capacitance vs. Drain Voltage 1000 f=1 MHz 100 VDD, DRAIN VOLTAGE (V) Gate-Source Voltage vs. Case Temperature 1.06 1.04 1.02 1 0.98 0. 0.94 0.92 - ...

Page 4

PD55008 - PD55008S TYPICAL PERFORMANCE Output Power vs. Input Power 14 480 MHz 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POW Drain Efficiency vs. Output Power 80 520 MHz ...

Page 5

TYPICAL PERFORMANCE Output Power vs. Supply Voltage 500 MHz VDD, SUPPLY VOLTAGE (V) Output Power vs. Gate-Source Voltage 500 MHz 6 4 ...

Page 6

PD55008 - PD55008S TYPICAL PERFORMANCE Output Power vs. Input Power 14 500 MHz 12 480 MHz 0.1 0.2 Pin, INPUT POWER (W) Drain Efficiency vs. Output Power ...

Page 7

TYPICAL PERFORMANCE Output Power vs. Supply Voltage 480 MHz 520 MHz VDD, SUPPLY VOLTAGE (V) Output Power vs. Gate-Source Voltage 480 MHz ...

Page 8

PD55008 - PD55008S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST SHORT FERRITE BEAD, FAIR RITE B1, B2 PRODUCTS (2743021446) C1, C12 240 pF, 100 mil CHIP CAPACITOR C2,C3,C10,C11 pF, TRIMMER CAPACITOR C4 82 pF, 100 mil ...

Page 9

TEST CIRCUIT PHOTOMASTER TEST CIRCUIT 6.4 inches PD55008 - PD55008S 9/18 ...

Page 10

PD55008 - PD55008S COMMON SOURCE S-PARAMETER (PD55008 12. 150mA FREQ (MHz) 50 0.781 100 0.784 150 0.803 200 0.830 250 0.852 300 0.873 350 0.892 400 0.906 450 0.919 ...

Page 11

COMMON SOURCE S-PARAMETER (PD55008 12. 800mA FREQ 11 (MHz) 50 0.832 100 0.833 150 0.839 200 0.851 250 0.851 300 0.861 350 0.872 400 0.883 450 0.894 500 0.902 550 0.910 ...

Page 12

PD55008 - PD55008S COMMON SOURCE S-PARAMETER (PD55008 12. 1.5A FREQ (MHz) 50 0.797 -161 100 0.824 -168 150 0.849 -171 200 0.861 -173 250 0.870 -175 300 0.879 -175 ...

Page 13

COMMON SOURCE S-PARAMETER (PD55008S 12. 150mA FREQ (MHz) 50 0.753 100 0.781 150 0.812 200 0.834 250 0.856 300 0.873 350 0.887 400 0.902 450 0.915 500 0.925 550 ...

Page 14

PD55008 - PD55008S COMMON SOURCE S-PARAMETER (PD55008S 12. 800mA FREQ (MHz) 50 0.862 -157 100 0.861 -168 150 0.869 -171 200 0.872 -173 250 0.879 -174 300 0.888 -175 ...

Page 15

COMMON SOURCE S-PARAMETER (PD55008S 12. 1.5A FREQ (MHz) 50 0.821 -162 100 0.849 -169 150 0.875 -171 200 0.885 -173 250 0.892 -175 300 0.895 -175 350 0.901 -176 ...

Page 16

PD55008 - PD55008S PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. MIN 3.4 A3 1 5.4 c 0.23 D 9.4 D1 7.4 E 13.85 E1 9.3 E2 7 ...

Page 17

PowerSO-10RF Straight Lead MECHANICAL DATA DIM. MIN. A1 1.62 A2 3.4 A3 1 5.4 c 0.23 D 9.4 D1 7.4 E 15.15 E1 9.3 E2 7 Note (1): ...

Page 18

... This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U ...

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