PD55008TR STMicroelectronics, PD55008TR Datasheet - Page 3

• Manufacturer Part Number: PD55008TR
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD55008TR

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 4A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 8W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4A
• Drain Source Voltage (max): 40V
• Output Power (max): 8W(Min)
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 1.6S
• Input Capacitance (typ)@vds: 58@12.5VpF
• Output Capacitance (typ)@vds: 38@12.5VpF
• Reverse Capacitance (typ): 2.8@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 52800mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Not Compliant

TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
Gate-Source Voltage vs. Case Temperature
1000
1.06
1.04
1.02
0.98
0.96
0.94
0.92
100
10
1
1
-25
0
f=1 MHz
V
DS
= 10 V
0
5
Tc, CASE TEMPERATURE (°C)
VDD, DRAIN VOLTAGE (V)
25
10
50
15
I
D
= .5A
75
20
I
Coss
Crss
D
Ciss
=
I
D
I
.25A
D
= 2A
= 1.5A
I
D
= 1A
100
25
Drain Current vs. Gate-Source Voltage
4
3
2
0
1
1
2
VGS, GATE-SOURCE VOLTAGE (V )
3
PD55008 - PD55008S
4
5
Vds = 10 V
3/18
6