MRFG35010 Freescale Semiconductor, MRFG35010 Datasheet - Page 2

• Manufacturer Part Number: MRFG35010
• Description: TRANSISTOR RF FET 3.5GHZ NI360HF
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35010

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10dB
• Voltage - Rated: 15V
• Current Rating: 2.9A
• Current - Test: 180mA
• Voltage - Test: 12V
• Power - Output: 10W
• Package / Case: NI-360HF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRFG35010R1
2
Table 3. Electrical Characteristics
Saturated Drain Current
Off State Leakage Current
Off State Drain Current
Off State Current
Gate - Source Cut - off Voltage
Quiescent Gate Voltage
Power Gain
Output Power, 1 dB Compression Point
Drain Efficiency
Adjacent Channel Power Ratio
(V
(V
(V
(V
(V
(V
(V
(V
(V
f = 3.55 GHz)
(V
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
DD
DS
GS
DS
DS
DS
DS
DD
DD
DD
= 3.5 Vdc, V
= - 0.4 Vdc, V
= 12 Vdc, V
= 28.5 Vdc, V
= 3.5 Vdc, I
= 12 Vdc, I
= 12 Vdc, P
= 12 Vdc, I
= 12 Vdc, I
= 12 Vdc, I
D
DQ
DQ
DQ
DS
out
GS
GS
= 180 mA)
DS
GS
= 180 mA, f = 3.55 GHz)
= 180 mA, f = 3.55 GHz)
= 180 mA, P
= 1 W Avg., I
= 15 mA)
= - 1.9 Vdc)
= 0 Vdc)
Characteristic
= 0 Vdc)
= - 2.5 Vdc)
out
DQ
= 1 W Avg.,
= 180 mA,
(T
C
= 25°C unless otherwise noted)
Symbol
V
V
ACPR
P1dB
I
I
I
I
GS(th)
GS(Q)
G
DSO
DSS
GSS
DSX
h
ps
D
Min
- 1.2
23
—
—
—
—
- 1
—
—
9
0.09
Typ
- 0.8
- 0.8
2.9
< 1
- 42
10
10
30
5
Freescale Semiconductor
Max
100
- 0.7
- 0.5
- 40
15
—
—
—
—
1
RF Device Data
mAdc
mAdc
μAdc
Unit
Adc
Vdc
Vdc
dBc
dB
W
%