MRFG35010 Freescale Semiconductor, MRFG35010 Datasheet - Page 5

• Manufacturer Part Number: MRFG35010
• Description: TRANSISTOR RF FET 3.5GHZ NI360HF
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35010

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10dB
• Voltage - Rated: 15V
• Current Rating: 2.9A
• Current - Test: 180mA
• Voltage - Test: 12V
• Power - Output: 10W
• Package / Case: NI-360HF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
NOTE: All data is referenced to package lead interface. Γ
All data is generated from load pull, not from the test circuit shown.
13.5
12.5
10.5
11.5
−10
−20
−30
−40
−50
−60
−70
9.5
36
34
32
30
28
26
24
22
20
13
12
10
11
0
Figure 4. W - CDMA ACPR and Input Return Loss
0.1
5
0.1
V
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
Γ
Figure 5. W - CDMA Output Power and Drain
V
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
Γ
Figure 3. Power Gain and Drain Efficiency
DS
S
DS
S
= 0.857é−144.24_, Γ
= 0.857é−144.24_, Γ
= 12 Vdc, I
= 12 Vdc, I
TYPICAL CHARACTERISTICS
Efficiency versus Input Power
ACPR
IRL
10
P
P
DQ
versus Output Power
DQ
out
versus Output Power
out
G
η
V
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
Γ
P
ps
, OUTPUT POWER (WATTS)
D
= 180 mA
, OUTPUT POWER (WATTS)
DS
S
= 180 mA
in
= 0.857é−144.24_, Γ
, INPUT POWER (dBm)
= 12 Vdc, I
S
L
P
L
and Γ
out
= 0.798é−164.30_
= 0.798é−164.30_
1
15
1
DQ
L
= 180 mA
are the impedances presented to the DUT.
η
D
L
= 0.798é−164.30_
20
25
10
10
0
−10
−20
−30
−40
−50
−60
−70
60
45
30
15
80
70
60
50
40
30
20
10
0
0
MRFG35010R1
5