BG 3230 E6327 Infineon Technologies, BG 3230 E6327 Datasheet
BG 3230 E6327
Specifications of BG 3230 E6327
SP000013594
Related parts for BG 3230 E6327
BG 3230 E6327 Summary of contents
Page 1
DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package • Integrated stabilized bias network • Integrated gate protection diodes • High gain, ...
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Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage I = 100 µ G1S G2S Gate1-source breakdown voltage + mA ...
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Electrical Characteristics Parameter AC Characteristics - (verified by random sampling) Forward transconductance G2S Gate1 input capacitance MHz DS G2S Output ...
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Total power dissipation P 300 mW 200 150 100 Gate 1 forward transconductance = ƒ( 5V Parameter DS G2S ...
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AGC characteristic AGC = ƒ( 200 MHz 0 dB -20 -30 -40 -50 -60 -70 -80 -90 0 0.5 1 1.5 2 Crossmodulation V = (AGC) unw kΩ 120 ...
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Crossmodulation test circuit R GEN 50 Ohm V V AGC DS 4n7 R1 2.2 µH 10 kOhm 4n7 4n7 RG1 50 Ohm BG3230_BG3230R 4n7 RL 50 Ohm 2005-11-03 ...
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Package Outline Pin 1 marking Foot Print Marking Layout Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel ackage SOT363 P 2 ±0.2 +0.1 6x 0.2 0.1 MAX. -0.05 0.1 M 0.1 6 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...