BFG 135A E6327 Infineon Technologies, BFG 135A E6327 Datasheet

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BFG 135A E6327

Manufacturer Part Number
BFG 135A E6327
Description
TRANS NPN RF 15V 150MA SOT223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFG 135A E6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain
9dB ~ 14dB
Power - Max
1W
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 100mA, 8V
Current - Collector (ic) (max)
150mA
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFG135AE6327
BFG135AE6327T
BFG135AE6327T
BFG135AE6327XT
Q2351394
SP000010991
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFG135A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
S
For low-distortion broadband output amplifier
Power amplifiers for DECT and PCN systems
Integrated emitter ballast resistor
f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
70 mA to 130 mA
T
= 6 GHz
100°C
Marking
BFG135A 1=E
2)
1)
2=B
Pin Configuration
3=E
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=C
-
4
-65 ... 150
-65 ... 150
-
Value
150
150
15
25
25
20
2
1
Package
SOT223
2007-03-29
BFG135A
Unit
V
mA
W
°C
1
2
3

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BFG 135A E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems GHz at collector currents from 130 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor f ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency I = 100 mA 200 MHz C CE Collector-base capacitance MHz ...

Page 4

Total power dissipation P tot 1200 mW 1000 900 800 700 600 500 400 300 200 100 Permissible Pulse Load totmax totDC ...

Page 5

Package Outline A 0.7 Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0.2 3 ±0 2.3 ±0.1 4.6 0. ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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