BFG 135A E6327 Infineon Technologies, BFG 135A E6327 Datasheet - Page 2

• Manufacturer Part Number: BFG 135A E6327
• Description: TRANS NPN RF 15V 150MA SOT223
• Manufacturer: Infineon Technologies

Specifications of BFG 135A E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
• Gain: 9dB ~ 14dB
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 8V
• Current - Collector (ic) (max): 150mA
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG135AE6327; BFG135AE6327T; BFG135AE6327T; BFG135AE6327XT; Q2351394; SP000010991

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 100 mA, V
= 1 V, I
= 25 V, V
= 10 V, I
B
C
E
= 0
= 0
BE
= 0
CE
thJA
= 0
= 8 V, pulse measured
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
15
80
-
-
-
Values
Value
typ.
120
-
-
-
-
50
max.
2007-03-29
100
160
50
1
BFG135A
-
Unit
V
µA
nA
µA
-
Unit
K/W