BFG 135A E6327 Infineon Technologies, BFG 135A E6327 Datasheet - Page 3

• Manufacturer Part Number: BFG 135A E6327
• Description: TRANS NPN RF 15V 150MA SOT223
• Manufacturer: Infineon Technologies

Specifications of BFG 135A E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
• Gain: 9dB ~ 14dB
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 8V
• Current - Collector (ic) (max): 150mA
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG135AE6327; BFG135AE6327T; BFG135AE6327T; BFG135AE6327XT; Q2351394; SP000010991

1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum available
I
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Third order intercept point at output
V
Z
C
C
C
C
G
S
CB
CE
EB
CE
ma
= 100 mA, V
= 30 mA, V
= 100 mA, V
= 100 mA, V
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 8 V, I
= |S
L
= 50
21
/S
C
12
CE
= 100 mA, f = 900 MHz,
| (k-(k
CE
CE
CE
= 8 V, Z
= 8 V, f = 200 MHz
= 8 V, Z
= 8 V, Z
2
-1)
1/2
)
BE
BE
S
CB
S
S
= Z
= Z
= 0 ,
= 0 ,
= Z
= 0 ,
Sopt
L
A
Sopt,
1)
= 50 ,
= 25°C, unless otherwise specified
,
Z
L
= Z
Lopt
,
3
Symbol
f
C
C
C
F
G
|S
IP
T
cb
ce
eb
ma
21e
3
|
2
min.
4.5
-
-
-
-
-
-
-
-
-
-
Values
10.5
typ.
1.1
0.8
1.5
2.6
4.5
14
33
6
7
9
2007-03-29
max.
1.5
BFG135A
-
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dBm