THYRISTOR 8A 200V TO-92

2N5064,112

Manufacturer Part Number2N5064,112
DescriptionTHYRISTOR 8A 200V TO-92
ManufacturerNXP Semiconductors
TypeSCR
2N5064,112 datasheet
 


Specifications of 2N5064,112

Package / CaseTO-92-3 (Standard Body), TO-226Scr TypeSensitive Gate
Voltage - Off State200VVoltage - Gate Trigger (vgt) (max)800mV
Voltage - On State (vtm) (max)1.71VCurrent - On State (it (av)) (max)510mA
Current - On State (it (rms)) (max)800mACurrent - Gate Trigger (igt) (max)200µA
Current - Hold (ih) (max)5mACurrent - Off State (max)10µA
Current - Non Rep. Surge 50, 60hz (itsm)10A @ 60HzOperating Temperature-65°C ~ 125°C
Mounting TypeThrough HoleCurrent - On State (it (rms) (max)800mA
Breakover Current Ibo Max10 ARated Repetitive Off-state Voltage Vdrm200 V
Off-state Leakage Current @ Vdrm Idrm0.01 mAForward Voltage Drop1.7 V
Gate Trigger Voltage (vgt)0.8 VMaximum Gate Peak Inverse Voltage5 V
Gate Trigger Current (igt)0.2 mAHolding Current (ih Max)5 mA
Mounting StyleSMD/SMTMaximum Operating Temperature+ 125 C
Minimum Operating Temperature- 65 CRepetitive Peak Off-state Volt200V
Off-state Voltage200VAverage On-state Current510mA
Hold Current5mAGate Trigger Current (max)200uA
Gate Trigger Voltage (max)800mVPeak Reverse Gate Voltage5V
Package TypeSPTPeak Repeat Off Current10uA
Peak Surge On-state Current (max)10AOn State Voltage(max)1.7@1.2AV
MountingThrough HolePin Count3
Operating Temp Range-65C to 125COperating Temperature ClassificationMilitary
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names2N5064P
2N5064P
568-4443
934002930112
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Philips Semiconductors
Thyristor
sensitive gate
GENERAL DESCRIPTION
Glass passivated sensitive gate
thyristor
in a
plastic
envelope,
intended for use in general purpose
switching
and
phase
control
applications. This device is intended
to
be
interfaced
directly
microcontrollers, logic integreated
circuits and other low power gate
trigger circuits.
PINNING - TO92 variant
PIN
DESCRIPTION
1
anode
2
gate
3
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
V
, V
Repetitive peak off-state
DRM
RRM
voltages
I
Average on-state current
T(AV)
I
RMS on-state current
T(RMS)
I
Repetitive peak on-state
TRM
current
I
Non-repetitive peak
TSM
on-state current
2
2
I
t
I
t for fusing
I
Peak gate current
GM
V
Peak gate voltage
GM
V
Peak reverse gate voltage
RGM
P
Peak gate power
GM
P
Average gate power
G(AV)
T
Storage temperature
stg
T
Operating junction
j
temperature
October 1997
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
,
Repetitive peak off-state voltages
DRM
V
RRM
I
Average on-state current
T(AV)
to
I
RMS on-state current
T(RMS)
I
Non-repetitive peak on-state current
TSM
PIN CONFIGURATION
3 2 1
CONDITIONS
half sine wave
T
67 ˚C
c
T
102 ˚C
c
all conduction angles
half sine wave; T
= 25 ˚C prior to surge;
a
t = 8.3 ms
t = 8.3 ms
T
= 25˚C, t
= 300 s; f = 120 Hz
a
p
T
= 25˚C
a
T
= 25˚C, over any 16 ms period
a
1
Product specification
2N5064
MAX. UNIT
200
V
0.5
A
0.8
A
10
A
SYMBOL
a
k
g
MIN.
MAX.
UNIT
-
200
V
-
0.51
A
-
0.255
A
-
0.8
A
-
8
A
-
10
A
2
-
0.4
A
s
-
1
A
-
5
V
-
5
V
-
0.1
W
-
0.01
W
-65
150
˚C
-65
125
˚C
Rev 1.200

2N5064,112 Summary of contents

  • Page 1

    Philips Semiconductors Thyristor sensitive gate GENERAL DESCRIPTION Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly microcontrollers, logic integreated circuits and ...

  • Page 2

    Philips Semiconductors Thyristor sensitive gate THERMAL RESISTANCES SYMBOL PARAMETER R Thermal resistance th j-c junction to case R Thermal resistance th j-a junction to ambient STATIC CHARACTERISTICS ˚ unless otherwise stated c GK ...

  • Page 3

    Philips Semiconductors Thyristor sensitive gate MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". October 1997 2.54 0.66 1.6 0.56 4.8 max 5.2 max 12.7 min 0.48 0. Fig.1. ...

  • Page 4

    Philips Semiconductors Thyristor sensitive gate DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data ...