BT168G,112 NXP Semiconductors, BT168G,112 Datasheet - Page 4

• Manufacturer Part Number: BT168G,112
• Description: THYRISTOR .8A 600V TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT168G,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3681; 934042490112; BT168G

Philips Semiconductors
9397 750 13511
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
1.5
0.5
10
1
2
1
0
3
2
10
10
t
values.
f = 50 Hz; T
duration for sinusoidal currents; maximum
values.
p
5
2
10 ms.
lead
10
83 C.
1
1
surge duration (s)
10
001aab449
4
Rev. 04 — 20 August 2004
10
Thyristors logic level for RCD/GFI/LCCB applications
Fig 5. RMS on-state current as a function of lead
I
T(RMS)
(1) T
(A)
0.8
0.6
0.4
0.2
1
0
temperature; maximum values.
50
lead
= 83 C.
10
3
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
BT168 series
T
I
T
t
j
p
initial = 25 C max
(s)
t
p
(1)
100
T
I
lead
001aab497
001aab450
TSM
t
( C)
10
150
2
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