BT168G,112 NXP Semiconductors, BT168G,112 Datasheet - Page 8

THYRISTOR .8A 600V TO-92

BT168G,112

Manufacturer Part Number
BT168G,112
Description
THYRISTOR .8A 600V TO-92
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT168G,112

Package / Case
TO-92-3 (Standard Body), TO-226
Scr Type
Sensitive Gate
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
500mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
100µA
Current - Non Rep. Surge 50, 60hz (itsm)
8A, 9A
Mounting Type
Through Hole
Current - On State (it (rms) (max)
800mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3681
934042490112
BT168G
Philips Semiconductors
7. Package information
9397 750 13511
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H(Tj)
3
2
1
0
R
junction temperature.
50
GK
= 1 k .
0
Epoxy meets requirements of UL94 V-0 at
50
100
001aab504
T
j
( C)
150
Rev. 04 — 20 August 2004
Thyristors logic level for RCD/GFI/LCCB applications
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
(1) R
(2) Gate open circuit.
D
10
10
10
/dt
10
4
3
2
function of junction temperature; typical
values.
1
0
GK
8
inch.
= 1 k .
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT168 series
(1)
(2)
100
T
j
001aab507
( C)
150
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