BT169H,412 NXP Semiconductors, BT169H,412 Datasheet - Page 2

• Manufacturer Part Number: BT169H,412
• Description: THYRISTOR 800V 50MA TO92-3
• Manufacturer: NXP Semiconductors

Specifications of BT169H,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 100µA
• Current - Hold (ih) (max): 3mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 10 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 1.5 mA
• Forward Voltage Drop: 1.25 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061729412

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT169H_1
Product data sheet
Type number
BT169H
Symbol
V
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
RRM
t
RGM
GM
G(AV)
T
/dt
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Rev. 01 — 31 March 2008
Conditions
half sine wave; T
see
all conduction angles; see
and
half sine wave; T
surge; see
t
I
dI
over any 20 ms period
p
TM
G
t = 10 ms
t = 8.3 ms
= 10 ms
/dt = 100 mA/ s
= 2 A; I
Figure 1
5
G
Figure 2
= 10 mA;
lead
j
= 25 C prior to
and
83 C;
3
Figure 4
Thyristor, logic level, high voltage
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2008. All rights reserved.
Max
800
800
0.5
0.8
9
10
0.41
50
1
5
2
0.1
+150
125
BT169H
Version
SOT54
Unit
V
V
A
A
A
A
A
A/ s
A
V
W
W
C
C
2
s
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