BT169H,412 NXP Semiconductors, BT169H,412 Datasheet

THYRISTOR 800V 50MA TO92-3

BT169H,412

Manufacturer Part Number
BT169H,412
Description
THYRISTOR 800V 50MA TO92-3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT169H,412

Package / Case
TO-92-3 (Standard Body), TO-226
Scr Type
Sensitive Gate
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
500mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
100µA
Current - Hold (ih) (max)
3mA
Current - Off State (max)
100µA
Current - Non Rep. Surge 50, 60hz (itsm)
9A, 10A
Mounting Type
Through Hole
Current - On State (it (rms) (max)
800mA
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
10 A
On-state Rms Current (it Rms)
0.8 A
Off-state Leakage Current @ Vdrm Idrm
0.05 mA
Gate Trigger Voltage (vgt)
0.3 V
Gate Trigger Current (igt)
50 uA
Holding Current (ih Max)
1.5 mA
Forward Voltage Drop
1.25 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061729412
1. Product profile
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Description
anode (A)
gate (G)
cathode (K)
Passivated sensitive gate thyristor in a SOT54 plastic package.
I
I
I
I
I
I
BT169H
Thyristor, logic level, high voltage
Rev. 01 — 31 March 2008
Very sensitive gate
Direct interfacing to logic level ICs
General purpose switching and phase
control
V
I
I
T(RMS)
T(AV)
RRM
, V
0.5 A
DRM
0.8 A
800 V
Simplified outline
SOT54 (TO-92)
I
I
I
I
I
High blocking voltage
Direct interfacing to low power gate drive
circuits
Earth leakage circuit breakers or
Ground Fault Circuit Interrupters (GFCI)
I
I
GT
TSM
3
2
1
100 A
9 A (t = 10 ms)
Graphic symbol
Product data sheet
A
sym037
G
K

Related parts for BT169H,412

BT169H,412 Summary of contents

Page 1

BT169H Thyristor, logic level, high voltage Rev. 01 — 31 March 2008 1. Product profile 1.1 General description Passivated sensitive gate thyristor in a SOT54 plastic package. 1.2 Features I Very sensitive gate I Direct interfacing to logic level ICs ...

Page 2

... NXP Semiconductors 3. Ordering information Table 2. Ordering information Type number Package Name BT169H TO-92 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V repetitive peak off-state voltage DRM V repetitive peak reverse voltage RRM I average on-state current ...

Page 3

... NXP Semiconductors 0.8 P tot (W) 0.6 0.4 0 0.1 = conduction angle Fig 1. Total power dissipation as a function of average on-state current; maximum values 10 I TSM ( Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT169H_1 Product data sheet 2.2 2 ...

Page 4

... NXP Semiconductors TSM ( Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values 2 I T(RMS) (A) 1 lead Fig 4. RMS on-state current as a function of surge duration; maximum values BT169H_1 Product data sheet 4 10 001aab449 I T(RMS) (A) 0.8 0.6 0.4 0 surge duration (s) Fig 5. Rev. 01 — ...

Page 5

... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-lead) lead R thermal resistance from junction to th(j-a) ambient th(j-lead) (K/ Fig 6. Transient thermal impedance from junction to lead as a function of pulse width BT169H_1 Product data sheet Conditions see Figure 6 printed circuit board mounted ...

Page 6

... NXP Semiconductors 6. Characteristics Table 5. Characteristics unless otherwise specified. j Symbol Parameter Static characteristics I gate trigger current GT I latching current L I holding current H V on-state voltage T V gate trigger voltage GT I off-state current D I reverse current R Dynamic characteristics dV /dt rate of rise of off-state ...

Page 7

... NXP Semiconductors ( (1) (2) (3) 0 0.4 1 1.067 0.187 s ( 125 C; typical values j ( 125 C; maximum values j ( maximum values j Fig 9. On-state current as a function of on-state voltage H( Fig 11. Normalized holding current as a function of junction temperature BT169H_1 Product data sheet 001aab454 L( 2.8 V (V) T Fig 10. Normalized latching current as a function of ...

Page 8

... NXP Semiconductors 7. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE ...

Page 9

... NXP Semiconductors 8. Revision history Table 6. Revision history Document ID Release date BT169H_1 20080331 BT169H_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 31 March 2008 BT169H Thyristor, logic level, high voltage Supersedes - © NXP B.V. 2008. All rights reserved. ...

Page 10

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors 11. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Legal information 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 9.2 Defi ...

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