BC847BPN,125 NXP Semiconductors, BC847BPN,125 Datasheet - Page 5

• Manufacturer Part Number: BC847BPN,125
• Description: TRANS NPN/PNP 45V 100MA SC-88
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BC847BPN,125

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Gain Bandwidth Product Ft: 100 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 400 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934042530125

NXP Semiconductors
7. Characteristics
BC847BPN_4
Product data sheet
Table 7.
T
[1]
Symbol Parameter
Per transistor; for the PNP transistor with negative polarity
I
I
h
V
V
V
C
C
f
CBO
EBO
T
amb
FE
CEsat
BEsat
BE
c
e
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage I
collector capacitance I
emitter capacitance
transition frequency
Characteristics
TR1 (NPN)
TR2 (PNP)
TR1 (NPN)
TR2 (PNP)
TR1 (NPN)
TR2 (PNP)
p
300 s;
Rev. 04 — 18 February 2009
0.02.
Conditions
V
V
T
V
V
I
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 100 MHz
C
C
C
C
E
C
C
j
CB
CB
EB
CE
= 150 C
= i
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 2 mA; V
= i
= 10 mA; V
= 5 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
c
45 V, 100 mA NPN/PNP general-purpose transistor
= 0 A; V
= 0 A; V
C
C
CE
E
E
B
B
= 0 A
= 2 mA
CE
B
= 0.5 mA
= 0.5 mA
CB
EB
= 0 A
= 0 A;
= 5 V
= 5 mA
= 5 V;
= 0.5 V;
= 10 V;
[1]
Min
-
-
-
200
-
-
-
580
600
-
-
-
-
100
BC847BPN
Typ
-
-
-
-
-
-
755
655
655
-
-
11
10
-
© NXP B.V. 2009. All rights reserved.
Max
15
5
100
450
100
300
-
700
750
1.5
2.2
-
-
-
Unit
nA
nA
mV
mV
mV
mV
mV
pF
pF
pF
pF
MHz
A
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