PUMZ1,115 NXP Semiconductors, PUMZ1,115 Datasheet - Page 3

• Manufacturer Part Number: PUMZ1,115
• Description: TRANS NPN/PNP 40V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMZ1,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: NPN, PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934034220115::PUMZ1 T/R::PUMZ1 T/R

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Oct 15
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
T
T
T
Per device
P
Per device
R
SYMBOL
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
tot
th(j-a)
NPN/PNP general purpose transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to ambient
PARAMETER
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
3
25 C
25 C; note 1
CONDITIONS
note 1
CONDITIONS
65
65
MIN.
VALUE
416
50
40
5
100
200
200
200
+150
150
+150
300
Product specification
MAX.
PUMZ1
V
V
V
mA
mA
mA
mW
mW
UNIT
K/W
C
C
C
UNIT