PUMZ1,115 NXP Semiconductors, PUMZ1,115 Datasheet - Page 4

• Manufacturer Part Number: PUMZ1,115
• Description: TRANS NPN/PNP 40V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMZ1,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: NPN, PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934034220115::PUMZ1 T/R::PUMZ1 T/R

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Oct 15
Per transistor; for the PNP transistor with negative polarity
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
c
NPN/PNP general purpose transistors
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
p
TR1
TR2
300 s;
PARAMETER
0.02.
I
I
I
I
I
I
I
E
E
C
C
C
E
C
= 0 A; V
= 0 A; V
= i
= 0 A; V
= 1 mA; V
= 50 mA; I
= 2 mA; V
e
= 0 A; V
4
CB
CB
EB
CONDITIONS
CE
CE
B
= 30 V
= 30 V; T
= 4 V
CB
= 5 mA; note 1
= 6 V
= 12 V; f = 100 MHz 100
= 12 V; f = 1 MHz
j
= 150 C
120
MIN.
Product specification
100
10
100
200
1.5
2.2
MAX.
PUMZ1
nA
nA
mV
pF
pF
MHz
A
UNIT