BC857BS,135 NXP Semiconductors, BC857BS,135 Datasheet - Page 3

• Manufacturer Part Number: BC857BS,135
• Description: TRANSISTOR PNP 45V 100MA SC-88
• Manufacturer: NXP Semiconductors

Specifications of BC857BS,135

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934042510135; BC857BS /T3; BC857BS /T3

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 26
Per device
R
Per transistor
I
I
h
V
V
V
C
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
PNP general purpose double transistor
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= 0; V
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −10 mA; I
= 2 mA; V
= i
= i
= −10 mA; V
e
c
= 0; V
= 0; V
CB
CB
EB
3
= −30 V
= −30 V; T
= −5 V
CONDITIONS
CB
EB
CE
CE
B
B
CE
B
= −10 V; f = 1 MHz
= −500 mV; f = 1 MHz
= −0.5 mA
= −0.5 mA
note 1
= −5 V
= −5 V
= −5 mA; note 1
= −5 V; f = 100 MHz 100
CONDITIONS
j
= 150 °C
−
−
−
200
−
−
−
−600
−
−
MIN.
VALUE
416
−
−
−
−
−
−
−755
−655
−
10
−
TYP.
Product data sheet
BC857BS
−15
−5
−100
450
−100
−400
−
−750
2.2
−
−
MAX. UNIT
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz