PBSS2515VS,315 NXP Semiconductors, PBSS2515VS,315 Datasheet - Page 4

• Manufacturer Part Number: PBSS2515VS,315
• Description: TRANS NPN 15V 1A LO-SAT SOT-666
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515VS,315

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 420MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056768315

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Dec 23
Per transistor unless otherwise specified
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BE
15 V low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CE(sat)
PARAMETER
NPN double transistor
V
V
V
V
V
V
I
I
I
I
I
V
I
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 10 mA; I
= 200 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 100 mA; V
= 5 V; I
= 15 V; I
= 15 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
CONDITIONS
C
C
C
C
C
4
E
E
B
E
= 0 A
= 10 mA
= 100 mA; note 1
= 500 mA; note 1
= 100 mA; note 1
B
B
B
B
= 0 A
= 0 A; T
= 0.5 mA
= I
CE
= 10 mA
= 50 mA; note 1
= 50 mA; note 1
= 50 mA; note 1
e
= 5 V; f = 100 MHz 250
= 0 A; f = 1 MHz
j
= 150 °C
−
−
−
200
150
90
−
−
−
−
−
−
−
MIN.
−
−
−
−
−
−
−
−
−
300
−
−
420
4.4
PBSS2515VS
TYP.
Product data sheet
100
50
100
−
−
−
25
150
250
<500
1.1
0.9
−
6
MAX.
nA
μA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
UNIT