PBSS2515VS,315 NXP Semiconductors, PBSS2515VS,315 Datasheet - Page 6

• Manufacturer Part Number: PBSS2515VS,315
• Description: TRANS NPN 15V 1A LO-SAT SOT-666
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515VS,315

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 420MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056768315

NXP Semiconductors
2004 Dec 23
handbook, halfpage
15 V low V
R CEsat
I
(1) T
(2) T
(3) T
Fig.6
C
(Ω)
/I
B
10
10
= 20.
10
−1
amb
amb
amb
10
1
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Equivalent on-resistance as a function of
collector current; typical values.
CE(sat)
1
(1)
(3)
NPN double transistor
10
(2)
10
2
I C (mA)
MLD648
10
3
6
handbook, halfpage
T
(1) I
(2) I
(3) I
(4) I
(5) I
Fig.7
amb
(mA)
1200
I C
800
400
B
B
B
B
B
= 25 °C.
0
= 4.6 mA.
= 4.14 mA.
= 3.68 mA.
= 3.22 mA.
= 2.76 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
2
(6) I
(7) I
(8) I
(9) I
(10) I
4
B
B
B
B
B
= 2.3 mA.
= 1.84 mA.
= 1.38 mA.
= 0.92 mA.
= 0.46 mA.
(4)
6
(3)
PBSS2515VS
(2)
Product data sheet
8
(10)
V CE (V)
(1)
(5)
(6)
(7)
(8)
(9)
MLD644
10