BCV64B,215 NXP Semiconductors, BCV64B,215 Datasheet - Page 5

• Manufacturer Part Number: BCV64B,215
• Description: TRANS PNP 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV64B,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V, 6V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V / 220 @ 2mA, 700mV
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V at TR1, 6 V at TR2
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz at TR1
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933835240215; BCV64B T/R; BCV64B T/R

NXP Semiconductors
BCV64B
Product data sheet
Fig 1.
Fig 3.
V
(mV)
h
CEsat
1000
FE
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−10
−10
800
600
400
200
−10
−10
−10
0
4
3
2
V
DC current gain as a function of collector
current; typical values
I
function of collector current; typical values
Collector-emitter saturation voltage as a
C
−1
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
= −5 V
= 20
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−10
−1
−1
(1)
(3)
(2)
−1
(1)
(2)
(3)
−10
−10
−10
−10
2
All information provided in this document is subject to legal disclaimers.
I
C
2
I
C
(mA)
mgt715
mgt717
(mA)
−10
−10
Rev. 4 — 2 August 2010
3
3
Fig 2.
Fig 4.
V
(mV)
V
(mV)
BEsat
BE
−1000
−1200
−1200
−1000
−800
−600
−400
−200
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−800
−600
−400
−200
−10
−10
0
0
V
Base-emitter voltage as a function of collector
current; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
−2
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= −5 V
= 20
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
PNP general-purpose double transistor
−10
−1
−1
(1)
(2)
(3)
−1
(1)
(2)
(3)
−10
−10
−10
−10
© NXP B.V. 2010. All rights reserved.
2
BCV64B
I
C
2
I
C
(mA)
mgt716
(mA)
mgt718
−10
−10
3
3
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